Tokyo Electron Limited

Kyowa Hakko Kirin Co., Limited

Shimpei Yamaguchi

Atsushi Tsuboi

Kiyotaka Imai

Atsushi Endo

Hiroshi Yano

Masaru Sugimoto

Masanobu Igeta

Susumu Iwamoto

Hideyuki Onodera

Tsutomu Agatsuma

Yasushi Kodashima

Yumiko Uochi

A method of manufacturing a semiconductor device includes: forming a first film containing carbon over a silicon nitride film and a first conductive film; forming a first silicon oxide film surrounding the first film over the silicon nitride film and the first conductive film; removing the first film to form, in the first silicon oxide film, a first opening that exposes at least a part of the silicon nitride film and at least a part of the first conductive film; and forming a second conductive film on and in contact with the first conductive film in the first opening.

Method of manufacturing semiconductor device

A method for manufacturing a semiconductor device includes forming a support on a side surface of a stack that extends from a substrate. The stack includes a second sacrificial film, plural first sacrificial films and plural silicon (Si)-containing films, wherein one first sacrificial film of the plural sacrificial films is stacked upon the second sacrificial film and the plural sacrificial films and the plural Si-containing films are alternately stacked upon one another, and at least a side of the second sacrificial film is not covered by the support, the one first sacrificial film and the substrate. The method further includes removing the second sacrificial film from the stack to form a space between the substrate and the one first sacrificial film and adjacent to the support, and filling the space with a dielectric film.

Fabrication process flow of dielectric layer for isolation of nano-sheet devices on bulk silicon substrate

A 4,6-hexadecadiene-2,4-dicarboxylic acid derivative represented by the following general formula (1) or a pharmaceutically acceptable salt thereof, each of which has an anti-tumor activity, and the like, are provided. [wherein, Rrepresents hydroxy, &#x2014;OR(wherein Rrepresents optionally substituted lower alkyl or an optionally substituted aliphatic heterocyclic group), or &#x2014;NRR(wherein Rand Rmay be the same or different, and each represents a hydrogen atom or optionally substituted lower alkyl) and Rrepresents hydroxy or &#x2014;OR(wherein Rrepresents optionally substituted lower alkyl or optionally substituted aralkyl)].

4,6-hexadecadiene-2,4-dicarboxylic acid derivative

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Tokyo, Japan

Shimpei Yamaguchi