Sony Corporation

Renesas Technology Corp.

Hitachi, Ltd.

Sony Group Corporation

Hitachi Ulsi Systems Co., Ltd.

Renesas Electronics Corporation

Shimpei Tsujikawa

Jiro Yugami

Toshiyuki Mine

Naoya Kasahara

Takayoshi Kato

Natsuki Yokoyama

Masahiro Ushiyama

Tsuyoshi Yamauchi

Masao Inoue

Shinichi Saito

Yasuhiro Shimamoto

Akira Yumoto

Shinichi Ushikura

Hiroshi Umeda

Nobuhide Yoneya

Junichi Tsuchimoto

Akihiro Nomoto

Ryouichi Yasuda

Masaharu Mizutani

Yasuhiko Akamatsu

Kouji Nomura

Takashi Yamazaki

Hirotaka Hamamura

A light emitting element, display device, and method of manufacture of the same are disclosed. In one example, a light emitting element includes a lower layer/interlayer insulation layer; a light reflection layer formed on the lower layer/interlayer insulation layer; an upper layer/interlayer insulation layer; a first electrode formed on the upper layer/interlayer insulation layer; an insulation film formed at least on a region of the upper layer/interlayer insulation layer where the first electrode is not formed; an organic layer formed over the insulation film from above the first electrode, the organic layer having a light emitting layer including an organic light emitting material; and a second electrode formed on the organic layer. A groove is formed in a portion of the upper layer/interlayer insulation layer located in an edge region of the light emitting element, and an upper portion of the groove is closed with the insulation film.

Light emitting element, method for manufacturing the same, and display device

[Object] To provide a display device that displays a display image with high resolution and higher uniformity, and an electronic apparatus including the display device. [Solution] A display device including: a driving transistor including a first-conductivity-type activation region provided in a semiconductor substrate, an opening provided to cross the activation region, a gate insulating film provided on the activation region including an inside of the opening, a gate electrode filling the opening, and second-conductivity-type diffusion regions provided on both sides of the activation region across the opening; and an organic electroluminescent element configured to be driven by the driving transistor.

Display device and electronic apparatus

A semiconductor integrated circuit includes a protected circuit connected to two power supply lines that provide a supply voltage, a detecting circuit that includes a resistive element and a capacitive element connected in series between two power supply lines and detects a surge generated in the power supply line based on potential variation of an inter-element connecting node, and a protection transistor that is connected between two power supply lines and has a control electrode connected to an output of the detecting circuit. The protection transistor has the control electrode formed from a different electrode material having a work function difference from a transistor of the same channel conductivity type in the protected circuit, to have a different threshold voltage from the transistor so that the amount of leakage current per unit channel width may be smaller compared with the transistor.

Semiconductor integrated circuit and manufacturing method thereof

A transistor includes: a gate electrode; a semiconductor layer facing the gate electrode with an insulating layer in between; a pair of source-drain electrodes electrically connected to the semiconductor layer; and a contact layer provided in a moving path of carriers between each of the pair of source-drain electrodes and the semiconductor layer, the contact layer having end surfaces covered with the source-drain electrode.

Transistor, display, and electric apparatus

Transistor, display, and electronic apparatus

The manufacturing method of the CMOS type semiconductor device which can suppress the boron penetration from the gate electrode of the pMOS transistors to the semiconductor substrate in the case that boron is contained in the gate electrodes, while enabling the improvement in the NBTI lifetime of the pMOS transistors, without degrading the performance of the nMOS transistors, is offered. The manufacturing method of the CMOS type semiconductor device concerning the present invention has the following process steps. Halogen is introduced to the semiconductor substrate of pMOS transistor formation areas. Next, a gate insulating film is formed on the semiconductor substrate of the pMOS transistor formation areas. Next, nitrogen is introduced to the gate insulating film.

Manufacturing method of CMOS type semiconductor device, and CMOS type semiconductor device

The technique capable of reducing the power consumption in the MISFET by suppressing the scattering of the carriers due to the fixed charges is provided. A silicon oxynitride film with a physical thickness of 1.5 nm or more and the relative dielectric constant of 4.1 or higher is formed at the interface between a semiconductor substrate and an alumina film. By so doing, a gate insulator composed of the silicon oxynitride film and the alumina film is constituted. The silicon oxynitride film is formed by performing a thermal treatment of a silicon oxide film formed on the semiconductor substrate in a NO or NO atmosphere. In this manner, the fixed charges in the silicon oxynitride film are set to 5&#xd7;10cmor less, and the fixed charges in the interface between the silicon oxynitride film and the alumina film are set to 5&#xd7;10cmor more.

Semiconductor device and manufacturing method thereof

A semiconductor device and a method for manufacturing the same of forming a silicon nitride film selectively without giving damages or contaminations to a surface of the silicon substrate thereby forming different types of gate dielectrics in one identical silicon substrate, are obtained by forming a silicon dioxide on the surface of a silicon substrate, then removing a portion thereof, forming a silicon nitride film to the surface of the substrate from which the silicon dioxide has been removed and, simultaneously, introducing nitrogen to the surface of the silicon dioxide which is left not being removed or, alternatively, depositing a silicon dioxide on the surface of the silicon substrate by chemical vapor deposition, then removing a portion thereof, forming a silicon nitride film on the surface of a substrate from which the silicon dioxide has been removed, and, simultaneously, introducing nitrogen to the surface of the silicon dioxide left not being removed, successively, dissolving and removing nitrogen-introduced silicon oxide film to expose the surface of the substrate and oxidizing the exposed surface of the silicon substrate and the silicon nitride film.

Semiconductor device and method for manufacturing thereof

A semiconductor device and a method for manufacturing the same of forming a silicon nitride film selectively without giving damages or contaminations to a surface of the silicon substrate thereby forming different types of gate dielectrics in one identical silicon substrate, are obtained by forming a silicon dioxide on the surface of a silicon substrate, then removing a portion thereof, forming a silicon nitride film to the surface of the substrate from which the silicon dioxide has been removed and, simultaneously, introducing nitrogen to the surface of the silicon dioxide which is left not being removed or, alternatively, depositing a silicon dioxide on the surface of the silicon substrate by chemical vapor deposition, then removing a portion thereof, forming a silicon nitride film on the surface of a substrate from which the silicon dioxide has been removed, and, simultaneously, introducing nitrogen to the surface of the silicon dioxide left not being removed, successively, dissolving and removing nitrogen-introduced silicon oxide film to expose the surface of the substrate and oxidizing the exposed surface of the silicon substrate and the silicon nitride film

Growing community of inventors

Tokyo, Japan

Shimpei Tsujikawa