Tokyo Electron Limited

Kabushiki Kaisha Saginomiya Seisakusho

Shimpei Jinnouchi

Towl Ikeda

Hiroshi Kuno

Hisashi Gomi

Masahide Itoh

Hiroshi Otsuki

A process gas supply apparatus according to the invention comprises a supply pipe line connecting a supply source containing an organic aluminum metallic compound in a liquid state, to a process device for forming a film on an object using the organic aluminum metallic compound, a force-feed device for force-feeding, through the supply pipe line, the organic aluminum metallic compound contained in the supply source, a vaporizing device provided across the supply pipe line for vaporizing the force-fed organic aluminum metallic compound of the liquid state, a purge gas introduction device connected to the supply pipe line for introducing a pressurized purge gas into the supply pipe line, a solvent introduction device connected to the supply pipe line for introducing into the supply pipe line a solvent for dissolving the organic aluminum metallic compound, an exhaustion device connected to the supply pipe line for exhausting the supply pipe line by a negative pressure, and a control device having a plurality of valves arranged across the supply pipe line, and controlling the flow of fluids flowing through the supply pipe line by opening and closing the valves.

Process gas supply apparatus

A CVD apparatus in which a process gas containing a carrier gas and a raw material gas is supplied to a process chamber through a supply line. A first part of the carrier gas is supplied from a primary line through a bubbling line and passed through a raw material liquid to derive the raw material gas, and then sent to the supply line. A second part of the carrier gas is supplied from the primary line through a bypass line directly to the supply line. Electromagnetic valves are provided on each of the bubbling line and the bypass line and flow sensors are provided on each of the primary line and the supply line. Each flow sensor has a reference element and a heated element, each of which has a thermally-sensitive and electrically conductive wire. Signals from the sensors are supplied to a flow controller, which measures the flow rate of the raw material gas by comparing the measured value with a reference value, and adjusts the opening degrees of the electromagnetic valves on the basis of the comparison.

Semiconductor treatment apparatus

Growing community of inventors

Nirasaki, Japan

Shimpei Jinnouchi