Tokyo Electron Limited

Shimon Otsuki

Jun Ogawa

Hideomi Hane

Noriaki Fukiage

Kentaro Oshimo

Takeshi Oyama

Hiroaki Ikegawa

Yasuo Kobayashi

Takayuki Karakawa

Akihiro Kuribayashi

Toyohiro Kamada

Ren Mukouyama

There is provided a method of forming a silicon nitride film on a substrate having first and second films formed thereon, wherein the first film and the second film have different incubation times. The method includes: supplying a processing gas composed of a silicon halide having Si—Si bonds to the substrate; supplying a non-plasmarized second nitriding gas to the substrate; forming a thin silicon nitride layer covering the first film and the second film by repeating the supplying the processing gas and the supplying the second nitriding gas in a sequential order; supplying a plasmarized modifying gas to the substrate and modifying the thin silicon nitride layer; and forming the silicon nitride film on the modified thin silicon nitride layer by supplying the raw material gas and the first nitriding gas to the substrate.

Film forming method and film forming apparatus

A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.

There is provided a substrate processing method, including: forming a silicon nitride film laminated on an etching target film by supplying a film forming gas to a substrate; oxidizing a surface of the silicon nitride film to form an oxide layer by supplying an oxidizing gas to the substrate; and etching the etching target film by supplying an etching gas containing halogen to the substrate, in a state in which the etching target film and the oxide layer are exposed on a surface of the substrate.

Substrate processing method and substrate processing apparatus

There is provided a film formation processing method for forming, in a vacuum atmosphere, a silicon nitride film along an inner wall surface of a recess constituting a pattern formed on a surface of a substrate, which includes: forming the silicon nitride film on the substrate by repeating, plural times, a process of supplying a raw material gas containing silicon to the substrate and subsequently, supplying an ammonia gas to the substrate to generate a silicon nitride on the substrate; and subsequently, modifying the silicon nitride film by activating a hydrogen gas and an ammonia gas and supplying the activated hydrogen gas and the activated ammonia gas to the substrate.

Method of manufacturing semiconductor device and apparatus of manufacturing semiconductor device

There is provided a film forming apparatus for performing a film forming process by supplying a film forming gas to a substrate in a vacuum atmosphere, comprising: a processing container in which a mounting part for mounting a substrate thereon is provided; a heating part configured to heat the substrate mounted on the mounting part; an exhaust part configured to evacuate an inside of the processing container; a cooling gas supply part configured to supply a cooling gas into the processing container; a purge gas supply part configured to supply a purge gas into the processing container; and a control part configured to output a control signal so as to execute a step of applying a stress to a thin film formed inside the processing container.

Film forming apparatus and operation method of film forming apparatus

A film forming process of forming a silicon nitride film by depositing a molecular layer of silicon nitride on a surface of a substrate, in which an uneven pattern is formed and a base made of metal reacting with halogen is exposed, includes alternately performing adsorbing silicon halide to the surface of the substrate and nitriding the silicon halide, wherein the film forming process is performed under a condition in which the substrate is heated at a film-forming temperature, the film-forming temperature falling within a range of equal to or higher than a minimum film-forming temperature at which the molecular layer of the silicon nitride is formed by reaction of the silicon halide and a plasmarized nitriding gas and less than a maximum film-forming temperature at which the reaction of the base made of metal and the silicon halide goes ahead.

Growing community of inventors

Nirasaki, Japan

Shimon Otsuki