Applied Materials Israel Limited

Shimon Levi

Roman Kris

Ishai Schwarzband

Ofer Adan

Yakov Weinberg

Ran Goldman

Dhananjay Singh Rathore

Olga Novak

Itay Zauer

Doron Girmonsky

Sergey Khristo

Mor Baram

Yan Avniel

Yehuda Cohen

Gadi Greenberg

Doron Meshulach

Efrat Rosenman

Vadim Vereschagin

Grigory Klebanov

Sharon Duvdevani-Bar

Sahar Levin

Efrat Noifeld

Kobi Kan

Erez Ravid

Ishai Schwartzband

Jeong Ho Yeo

Roi Meir

Hiroshi Miroku

Kasturi Saha

Taku Yoshizawa

A method for process control of a semiconductor structure fabricated by a series of fabrication steps, the method comprising obtaining an image of the semiconductor structure indicative of at least two individual fabrication steps; wherein the image is generated by scanning the semiconductor structure with a charged particle beam and collecting signals emanating from the semiconductor structure; and processing, by a hardware processor, the image to determining a parameter of the semiconductor structure, wherein processing includes measuring step/s from among the fabrication steps as an individual feature.

Method, system and computer program product for 3D-NAND CDSEM metrology

An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.

Measuring height difference in patterns on semiconductor wafers

A method for monitoring a first nanometric structure formed by a multiple patterning process, the method may include performing a first plurality of measurements to provide a first plurality of measurement results; wherein the performing of the first plurality of measurements comprises illuminating first plurality of locations of a first sidewall of the first nanometric structure by oblique charged particle beams of different tilt angles; and processing, by a hardware processor, the first plurality of measurement results to determine a first attribute of the first nanometric structure.

Method for monitoring nanometric structures

A method for determining overlay between layers of a multilayer structure may include obtaining a given image representing the multilayer structure, obtaining expected images for layers of the multilayer structure, providing a combined expected image of the multilayer structure as a combination of the expected images of said layers, performing registration of the given image against the combined expected image, and providing segmentation of the given image, thereby producing a segmented image, and maps of the layers of said multilayered structure. The method may further include determining overlay between any two selected layers of the multilayer structure by processing the maps of the two selected layers together with the expected images of said two selected layers.

Technique for measuring overlay between layers of a multilayer structure

A system, a non-transitory computer readable medium and a method for detecting a parameter of a pattern, the method comprises: obtaining an image of the pattern; wherein the image is generated by scanning the pattern with a charged particle beam; processing the image to provide an edge enhanced image; wherein the processing comprises computing an aggregate energy of first n spectral components of the image, wherein n exceeds two; and further processing the edge enhanced image and determining a parameter of the pattern.

System, method and computer readable medium for detecting edges of a pattern

A method for characterizing a surface of a sample object, the method including dividing the surface into pixels which are characterized by a parameter variation, and defining blocks of the surface as respective groups of the pixels. The method further includes irradiating the pixels in multiple scans over the surface with radiation having different, respective types of polarization, and detecting returning radiation from the pixels in response to each of the scans. For each scan, respective block signatures of the blocks are constructed, in response to the returning radiation from the group of pixels in each block. Also for each scan, a block signature variation using the respective block signatures of the blocks is determined. In response to the block signature variation, one or more of the types of polarization for use in subsequent examination of a test object are selected.

High throughput across-wafer-variation mapping

Growing community of inventors

Tivon, Israel

Shimon Levi