Shenzhen China Star Optoelectronics Technology Co., Ltd.

Shimin Ge

Wenhui Li

Longqiang Shi

Xiaowen Lv

Chihyuan Tseng

Hejing Zhang

Chihyu Su

Tao Sun

Wen Shi

Yanhong Meng

The invention provides an array substrate and a manufacturing method thereof. The array substrate comprises a substrate body, a common electrode, a light shield layer, an insulating layer, a polycrystalline silicon layer, a gate insulating layer, a gate electrode, a medium layer and a source-drain electrode. The array substrate is characterized in that the common electrode is formed on the substrate body, the light shield layer is positioned on the common electrode, the insulating layer is positioned on the light shield layer and the common electrode, and the gate electrode is connected with the common electrode through a through hole. The manufacturing method of the array substrate includes the steps: forming the patterned common electrode and the patterned light shield layer by one-time photomask and multiple etching after a transparent conducting layer and a first metal layer are formed on the substrate body, and saving one photomask; forming an electrode through hole communicated with the common electrode and the gate electrode after photomask and etching, and subsequently manufacturing the medium layer and the source-drain electrode. The whole process has seven photomasks, machining process steps of an array substrate tube are simplified, and the manufacturing cost of the array substrate is reduced.

Manufacturing method for TFT substrate and TFT substrate manufactured by the manufacturing method thereof

A dual-gate TFT (thin film transistor) array substrate and a manufacturing method thereof are provided. A source electrode and a drain electrode are formed on a common electrode layer; and a common electrode of the common electrode layer, the source electrode and the drain electrode can simultaneously be formed by one mask during manufacturing. Therefore, the dual-gate TFT array substrate and the manufacturing method thereof have beneficial effects to reduce the number of masks, shorten the process, and improve the manufacturing efficiency.

Dual-gate TFT array substrate and manufacturing method thereof

A method for manufacturing a dual gate oxide semiconductor TFT substrate utilizes a halftone mask to implement a photo process, which not only accomplishes patterning to an oxide semiconductor layer but also obtains an oxide conductor layer with ion doping. The method implements patterning to a bottom gate isolation layer and a top gate isolation layer at the same time with one photolithographic process. The method implements patterning to second and third metal layers at the same time to obtain a first source, a first drain, a second source, a second drain, a first top gate and a second top gate with one photolithographic process. The method implements patterning to a second flat layer, a passivation layer and a top gate isolation layer at the same time with one photolithographic process. The number of photolithographic processes involved is reduced to nine so as to simplify the manufacturing process.

Manufacturing method of dual gate oxide semiconductor TFT substrate and substrate thereof

The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The manufacture method of the dual gate oxide semiconductor TFT substrate utilizes the halftone mask to implement one photo process, which cannot only accomplish the patterning to the oxide semiconductor layer but also obtain the oxide conductor layer (') with ion doping process, and the oxide conductor layer (&#x2032;) is employed as being the pixel electrode of the LCD to replace the ITO pixel electrode in prior art; the method manufactures the source (), the drain () and the top gate () at the same time with one photo process; the method implements patterning process to the passivation layer () and the top gate isolation layer () together with one photo process, to reduce the number of the photo processes to nine for shortening the manufacture procedure, raising the production efficiency and lowering the production cost.

Structure of dual gate oxide semiconductor TFT substrate including TFT having top and bottom gates

The present invention provides a flexible OLED and a manufacture method thereof. The flexible OLED is capable of decreasing the resistance of the second electrode () and increasing the conducting ability to even the voltages of respective pixels, to improve the display homogeneity, and meanwhile, capable of reducing the thickness of the second electrode () and saving the material of the second electrode () by covering the auxiliary conducting layer () on the second electrode (). The manufacture method of the flexible OLED is capable of decreasing the resistance of the second electrode () and increasing the conducting ability to even the voltages of respective pixels, to improve the display homogeneity, and meanwhile, capable of reducing the thickness of the second electrode () and saving the material of the second electrode () by forming the auxiliary conducting layer () on the second electrode () to cover the second electrode ().

Flexible OLED and manufacture method thereof

An FFS mode array substrate and a manufacturing method thereof are provided. The FFS mode array substrate has: a glass substrate provided with a gate electrode thereon; a first insulation layer; a semiconductor layer having a channel region and a common electrode region to form a channel semiconductor layer on the channel region of the semiconductor layer, and form a common electrode layer on the common electrode region of the semiconductor layer by doping semiconductor thereon; and a second insulation layer provided with a first through hole and a second through hole therein.

FFS mode array substrate with TFT channel layer and common electrode layer patterned from a single semiconductor layer and manufacturing method thereof

A dual gate oxide semiconductor thin-film transistor (TFT) substrate includes a substrate; a bottom gate positioned on the substrate; a bottom gate isolation layer positioned on the substrate and the bottom gate; a first oxide semiconductor layer positioned on the bottom gate isolation layer above the bottom gate; an oxide conductor layer positioned on the bottom gate isolation layer at one side of the first oxide semiconductor layer; a top gate isolation layer positioned on the first oxide semiconductor layer, the oxide conductor layer, and the bottom gate isolation layer; a top gate positioned on the top gate isolation layer above a middle part of the first oxide semiconductor layer; a source and a drain positioned on the top gate isolation layer at two sides of the top gate; and a passivation layer positioned on the top gate isolation layer, the source, the drain, and the top gate.

Structure of dual gate oxide semiconductor TFT substrate

A dual gate oxide semiconductor TFT substrate is made by utilizing a halftone mask to implement one photo process, which accomplishes patterning of an oxide semiconductor layer and forms an oxide conductor layer with ion doping process. Patterning of a bottom gate isolation layer and a top gate isolation layer are performed at the same time with one photo process. A first top gate, a first source, a first drain, a second top gate, a second source, and a second drain are formed at the same time with one photo process. Patterning of a flat layer, a passivation layer, and a top gate isolation layer are performed at the same time with one photo process. As such, the number of photo processes applied to manufacture the TFT substrate is reduced to five and the manufacturing process is shortened to thereby raise the production efficiency and lower the production cost.

Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof

The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The manufacture method of the dual gate oxide semiconductor TFT substrate utilizes the halftone mask to implement one photo process, which cannot only accomplish the patterning to the oxide semiconductor layer but also obtain the oxide conductor layer (') with ion doping process; the method implements the patterning process to the bottom gate isolation layer () and the top gate isolation layer () at the same time with one photo process; the method implements patterning process to the second, third metal layers at the same time to obtain the first source (), the first drain (), the second source (), the second drain (), the first top gate () and the second top gate () with one photo process; the method implements patterning process to the second flat layer (), the passivation layer () and the top gate isolation layer () at the same time with one photo process, to reduce the number of the photo processes to nine for effectively simplifying the manufacture process, raising the production efficiency and lowering the production cost.

The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The manufacture method of the dual gate oxide semiconductor TFT substrate utilizes the halftone mask to implement one photo process, which cannot only accomplish the patterning to the oxide semiconductor layer but also obtain the oxide conductor layer (') with ion doping process; the method implements the patterning process to the bottom gate isolation layer () and the top gate isolation layer () at the same time with one photo process; the method manufactures the first top gate (), the first source (), the first drain (), the second top gate (), the second source (), the second drain () at the same time with one photo process; the method implements patterning process to the flat layer (), the passivation layer () and the top gate isolation layer () at the same time with one photo process, to reduce the number of the photo processes to five for shortening the manufacture procedure, raising the production efficiency and lowering the production cost.

The present invention provides a dual gate TFT substrate structure utilizing COA skill, comprising a substrate (), a bottom gate () positioned on the substrate (), a bottom gate isolation layer () covering the bottom gate () and the substrate (), an active layer () positioned on the bottom gate isolation layer () above the bottom gate (), an etching stopper layer () positioned on the active layer () and the bottom gate isolation layer (), a source/a drain () positioned on the etching stopper layer () and respectively contacted with two ends of the active layer (), color filter () positioned on the source/the drain () and the etching stopper layer (), and a top gate () positioned on the color filter () and contacted with the bottom gate (); the active layer () and the thin film of the previous manufacture process can be effectively protected and the original property and the stability of the active layer () and the thin film of the previous manufacture process can be ensured.

Dual gate TFT substrate structure utilizing COA skill

The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The manufacture method of the dual gate oxide semiconductor TFT substrate utilizes the halftone mask to implement one photo process, which cannot only accomplish the patterning to the oxide semiconductor layer but also obtain the oxide conductor layer (') with ion doping process, and the oxide conductor layer (&#x2032;) is employed as being the pixel electrode of the LCD to replace the ITO pixel electrode in prior art; the method manufactures the source (), the drain () and the top gate () at the same time with one photo process; the method implements patterning process to the passivation layer () and the top gate isolation layer () together with one photo process, to reduce the number of the photo processes to five for shortening the manufacture procedure, raising the production efficiency and lowering the production cost.

Growing community of inventors

Shenzhen, China

Shimin Ge