Changxin Memory Technologies, Inc.

Shijie Bai

Zhongming Liu

Jun Xia

Longyang Chen

Yexiao Yu

Xinman Cao

Shuai Guo

Mingguang Zuo

Jingwen Lu

Bingyu Zhu

Ning Xi

Peimeng Wang

Bin Zhao

Xianguo Zhou

A semiconductor structure and the method for forming the same are provided. The method includes: providing a substrate including an active region; forming a word line in the substrate including a first portion and a second portion located at the end of the first portion, wherein the second portion of the word line protrudes from the first portion of the word line along the direction perpendicular to the substrate; forming a dielectric layer covering the substrate; and etching the dielectric layer and a part of the substrate to simultaneously form a first contact hole exposing the second portion of the word line and a second contact hole exposing the active region. The invention reduces the etching time and improves the etching efficiency. It avoids an excessively large etching depth of the second contact hole, thereby reducing the damage to the active region and the leakage current inside the semiconductor structure.

Semiconductor structure and method for forming same

A method for manufacturing a semiconductor structure comprises: forming a stacked structure on a base having an array area and a peripheral area; forming a first mask layer on the stacked structure, in which the first mask layer corresponding to the array area has a first pattern; ion doping the first mask layer on the array area to obtain a doped first mask layer; and etching the stacked structure through the doped first mask layer to transfer the first pattern to the stacked structure.

Semiconductor structure and method for manufacturing same

Embodiments provide a method for fabricating a semiconductor device and the semiconductor device. The method includes: providing a semiconductor substrate having a first region and a second region; forming an initial mask layer on an upper surface of the substrate; patterning the initial mask layer, forming a first pattern mask having a first height on the first region, and forming a second pattern mask having a second height on the second region, where a pattern density of the first pattern mask is greater than a pattern density of the second pattern mask, and the first height is greater than the second height; and etching the substrate based on the first pattern mask and the second pattern mask, transferring a pattern of the first pattern mask to the first region, and transferring a pattern of the second pattern mask to the second region.

Method for fabricating semiconductor device and semiconductor device

The present application relates to the technical field of manufacturing semiconductor, and in particular to a method of manufacturing semiconductor structure and a semiconductor structure. The method of manufacturing semiconductor structure includes: forming a conductive layer on a substrate, and removing part of the conductive layer to form a contact structure composed of a plurality of contact pads; where each of the contact pads is electrically connected to a transistor structure on the substrate; and, after the contact pads are formed, removing residual core on top ends of the contact pads away from the substrate by dry etching.

Method of manufacturing semiconductor structure and semiconductor structure

A preparation method for a semiconductor structure and a semiconductor structure are provided. Herein, the preparation method comprises: providing a structure to be processed, wherein the structure to be processed comprises a substrate, and an etching target layer, a bottom mask layer and a first mask layer stacked on the substrate; patterning the first mask layer to form a first pattern, the first pattern exposing parts of the bottom mask layer; forming spacers with vertical sidewall morphology on sidewalls of the first mask layer; removing the first mask layer; filling a gap between the spacers with a filling layer, in which a material of the spacers to a material of the filling layer has a high etching selectivity ratio; and removing the spacers.

Preparation method for semiconductor structure and same

The present disclosure relates to the technical field of semiconductor manufacturing, and in particular, to a memory device, and a manufacturing method and a driving method thereof. The memory device includes: a substrate; a stacked structure, where the stacked structure includes a first gate layer, a second gate layer, and interlayer isolation layers, one of the interlayer isolation layers is located between the first gate layer and the second gate layer, and another one of the interlayer isolation layers is located between the first gate layer and the substrate; and a memory structure, including a through hole penetrating the stacked structure, and a trench structure filled in the through hole. The present disclosure enables the memory device to be used as nonvolatile memory with different storage modes, thereby realizing versatility of the memory device.

Memory device, and manufacturing method and driving method thereof

Provided is a preparation method of a semiconductor device, including the following steps: providing a substrate and forming a mask layer with a plurality of first windows on the substrate; forming a dielectric layer, the dielectric layer at least covering sidewalls of the first windows; forming a first photoresist material layer, the first photoresist material layer covering the dielectric layer and the mask layer and filling the first windows; patterning the first photoresist material layer to form a patterned first photoresist layer which exposes a top surface of the dielectric layer; by using the first photoresist layer and the mask layer as masks, removing the dielectric layer to form second windows; and removing part of the substrate along the second windows to form a patterned substrate.

Preparation method of semiconductor device

The present disclosure provides a semiconductor structure and a manufacturing method thereof. The manufacturing method includes: depositing a thin-film stacked structure on a substrate; forming a first hole in the thin-film stacked structure; growing an epitaxial silicon pillar in the first hole; etching the thin-film stacked structure and the epitaxial silicon pillar along a first direction to form a first trench, the first trench passing through a center of the epitaxial silicon pillar and dividing the epitaxial silicon pillar into a first half pillar and a second half pillar; forming a first isolation layer; forming a first channel region of a first doping type, and forming a second channel region of a second doping type; and forming a gate dielectric layer and a gate conductive layer on a surface of each of the first channel region and the second channel region.

Manufacturing method of semiconductor structure and semiconductor structure

A manufacturing method of a semiconductor structure includes: providing a base; forming multiple bit line structures on the base, where the multiple bit line structures are parallel to each other and extend in a first direction, and a trench is formed between adjacent bit line structures; forming a first conductive layer in the trench, where a void is formed in the first conductive layer; removing a part of the first conductive layer to form a first groove, where the bottom of the first groove exposes the void; forming an epitaxial layer on an inner wall of the first groove; and allowing the epitaxial layer to epitaxially grow to form an extension portion, such that the extension portion fills the void.

Manufacturing method of semiconductor structure with epitaxial layer forming extension portion

A method for preparing a capacitor contact structure of a memory device includes providing a substrate, forming a plurality of bit line structures arranged in parallel and at intervals on the substrate, and the bit line structures extending along a first direction; forming conducting layer structures between adjacent bit line structures, upper surfaces of which are lower than upper surfaces of the bit line structures; forming sacrificial layers on the conducting layer structures; forming a plurality of isolation trenches arranged in parallel and at intervals in the sacrificial layer, the isolation trenches extend along a second direction, and the second direction intersects the first direction; forming isolation dielectric layers in the isolation trenches; and removing the sacrificial layer based on the bit line structure and the isolation dielectric layer to form grooves between adjacent bit line structures and between adjacent isolation dielectric layers, the grooves expose the conducting layer structures.

Memory device capacitor contact structure and method for preparing same

A method for manufacturing a semiconductor structure and a semiconductor structure are provided. The method for manufacturing a semiconductor structure includes: forming a conductive layer, a protective layer, and a mask layer in sequence on the substrate, the mask layer including a first pattern facing the first region and a second pattern facing the second region; forming a restriction pattern located in the second region by etching the protective layer using the mask layer as a mask; and forming contact pads located in the first region and connecting wires located in the second region on the conductive layer by etching the conductive layer using the mask layer as a mask.

Method for manufacturing semiconductor structure and semiconductor structure

A method for manufacturing a semiconductor structure includes: providing a base, in which a plurality of bit lines extending in a first direction and a groove located between two adjacent ones of the bit lines are provided on the base; forming an initial contact layer and an initial protection layer filling the groove, in which the initial contact layer is in contact with the base, the initial protection layer is located on the initial contact layer; patterning the initial contact layer and the initial protection layer to form contact layers that are discrete from each other and protection layers that are discrete from each other; and forming a dielectric layer between two adjacent ones of the contact layers, in which the dielectric layer is further located between two adjacent ones of the protection layers, a material of the dielectric layer is different from a material of the protection layer.

Method for manufacturing semiconductor structure and same

A semiconductor manufacturing method includes: providing a semiconductor substrate, in which the semiconductor substrate includes an array region and a peripheral circuit region, in the array region, multiple capacitor contact holes are on the semiconductor substrate, and a first conductive layer is deposited on a bottom of each of the capacitor contact hole, and in the peripheral circuit region, a device layer is on the semiconductor substrate; treating the first conductive layer to increase its roughness; forming wire contact holes exposing the semiconductor substrate in the peripheral circuit region; forming a transition layer that at least covers a surface of the first conductive layer and a surface of the semiconductor substrate exposed by the wire contact holes; and forming a second conductive layer that covers the transition layer, and fills the capacitor contact holes and the wire contact holes.

Semiconductor device manufacturing method comprising first conductive layer with increased roughness in array region

A method for manufacturing a semiconductor structure, comprising: forming a first mask layer, a first buffer layer, a second mask layer and a second buffer layer sequentially stacked from bottom to top; patterning the second buffer layer and the second mask layer; forming a first mask pattern on a side wall of a first pattern, the first mask pattern extending in a first direction; removing the second buffer layer and the second mask layer; forming a third mask layer, a third buffer layer, a fourth mask layer and a fourth buffer layer sequentially stacked form bottom to top; patterning the fourth buffer layer and the fourth mask layer; forming a second mask pattern on a side wall of a second pattern, the second mask pattern extending in a second direction; removing the fourth buffer layer and the fourth mask layer.

Method for manufacturing semiconductor structure

Provided is a formation method of a semiconductor structure, including: providing a substrate having a first region and a second region, a plurality of discrete through holes being formed in the substrate, an arrangement density of the through holes in the first region being greater than that in the second region; forming a sacrificial layer filling the through holes; etching some thickness of the substrate around the sacrificial layer to form openings, the openings surrounding the sacrificial layer, a depth of the opening being less than a depth of the through hole in a direction perpendicular to a surface of the substrate; and removing the sacrificial layer, the openings communicating with the corresponding through holes to form trenches.

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Hefei, China

Shijie Bai