Boe Technology Group Co., Ltd.

Shihong Ouyang

Ze Liu

Honhang Fong

Shucheng Cai

Qiang Shi

Yingtao Xie

A thin film transistor and its manufacturing method, an array substrate and a display device are disclosed, the thin film transistor is of a gate bottom contact type, and includes a gate electrode () and a gate insulation layer (), the gate insulation layer () is provided with a recess () at a position corresponding to the gate electrode (). With the thin film transistor, the problem of wire breakage in the active layer at the channel between the source/drain electrodes can be avoided, the performance and stability of the thin film transistor is improved, and the production cost is lowered down.

Thin film transistor including recessed gate insulation layer and its manufacturing method, array substrate, and display device

An organic thin film transistor, a manufacturing method thereof and an array substrate are provided. The manufacturing method of an organic thin film transistor includes: forming an organic semiconductor layer; partially sheltering the organic semiconductor layer, so that a sheltered region and an unsheltered region are formed on the organic semiconductor layer, the sheltered region corresponding to a region where an active layer of the organic thin film transistor needs to be formed; and doping the organic semiconductor layer, so that the organic semiconductor layer in correspondence with the sheltered region is not doped, and the organic semiconductor layer in correspondence with the unsheltered region is doped.

Organic thin film transistor and manufacturing method thereof, array substrate

The present disclosure provides a thin film transistor (TFT), its manufacturing method, an array substrate and a display device. The method for manufacturing the TFT includes steps of forming patterns of a gate electrode, a source electrode and a drain electrode on a base substrate; and forming a pattern of an active layer and a pattern of a passivation layer covering the active layer by a single patterning process. The passivation layer is made of a negative or positive photoresist, and the active layer is insulated from the gate electrode and electrically connected to the source electrode and the drain electrode.

Thin film transistor, its manufacturing method, array substrate and display device

An organic thin film transistor and a method of manufacturing the same, an array substrate and a display device are disclosed. The thin film transistor including: a source electrode (), a drain electrode (), an organic semiconductor layer () disposed on the source electrode () and drain electrode (), and a modified layer (); the modified layer () is disposed at a position below an organic semiconductor layer () and corresponding to the source electrode () and the drain electrode (), covers the source electrode () and the drain electrode (), and is configured to change a contact angle on both the source electrode () and the drain electrode (). The thin film transistor avoids the problems of poor formation effects and easy disconnection of the organic semiconductor layer () because of the large contact angle on electrode layers, and therefore reduces production costs.

Organic thin film transistor and method of manufacturing the same, array substrate and display device

An organic thin film transistor and a preparation method thereof, an array substrate and a preparation method thereof, and a display device; and the preparation method of the organic thin film transistor comprises: forming a source-drain metal layer including a source electrode () and a drain electrode (), and forming an organic semiconductor active layer () in contact with the source electrode () and the drain electrode (); and forming an organic insulating thin film () on a substrate () where the source-drain metal layer and the organic semiconductor active layer () have been formed, thinning the organic insulating thin film () and curing the thinned organic insulating thin film (), or curing the organic insulating thin film () and thinning the cured organic insulating thin film (), to form an organic insulating layer (). The method can be used to form a thin and uniform organic insulating layer, so a technical difficulty in forming a via hole is reduced.

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Beijing, China

Shihong Ouyang