Tianjin Sanan Optoelectronics Co., Ltd.

Shihchieh Hou

Yu-Ren Peng

Shao-Hua Huang

Shasha Chen

Kaiqing Xu

Kunte Lin

Yenchin Wang

Jinghua Chen

Chong Xu

A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface, and that includes a first semiconductor layer, an active layer, and a second semiconductor layer. The active layer includes a quantum well structure having multiple periodic units, each including a well layer and a barrier layer greater in bandgap than the well layer. The bandgap of the barrier layer of at least one of the periodic units proximate to the first surface is smaller than that proximate to the second surface, and a thickness of the well layer of at least one of the periodic units proximate to the first surface is greater than that proximate to the second surface. In some embodiments, a bandgap of a second spacing layer disposed between the active and second semiconductor layers increases in a direction from the first surface to the second surface.

Light-emitting device

Growing community of inventors

Tianjin, China

Shihchieh Hou