Hewlett-packard Development Company, L.p.

Hewlett-packard Company

W&wsens, Devices, Inc.

Agilent Technologies, Inc.

Other

Gazillion Bits, Inc.

Hewlett Packard Enterprise Development LP

Lumileds Lighting U.s., LLC

Samsung Electronics Co., Ltd.

Wwram Devices, Inc.

Shih-Yuan Wang

Alexandre M Bratkovski

Zhiyong Li

Richard Stanley Williams

Michael Renne Ty Tan

M Saif Islam

Wei E Wu

Wei Guang Wu

Michael R Tan

Shih-Ping Wang

Philip John Kuekes

Huei Pei Kuo

David A Fattal

Yong Qin Chen

Scott W Corzine

Nobuhiko P Kobayashi

Raymond G Beausoleil

Theodore I Kamins

Duncan R Stewart

Michael Josef Stuke

Sagi Varghese Mathai

Jingjing Li

Jianhua Yang

Wayne V Sorin

Terrel L Morris

Min Hu

Lars Helge Thylen

Fung Suong Ou

Paul Kessler Rosenberg

Gary A Gibson

Mihail Sigalas

Zhaoning Yu

Albert T Yuen

Long Yang

Michael R T Tan

Steven J Barcelo

Zhang-Lin Zhou

Robert G Walmsley

William David Holland

Aly F Elrefaie

Alex Bratkovski

Zuhua Zhu

Chandrakant D Patel

Shashank Sharma

Charles Santori

Michael S Schlansker

Richard P Schneider

Miao Zhu

John Phillip Ertel

Nathaniel Quitoriano

Tao Zhang

Qiangfei Xia

Ansoon Kim

Feng Miao

Richard R Baldwin

Jing Tang

Kenneth H Hahn

Haiqing Wei

Marco Fiorentino

Mineo Yamakawa

Moray McLaren

Robert Newton Bicknell

Sean Spillane

Pierre H Mertz

Hong Lin

Dubravko I Babic

Michael Joseph Ludowise

Jose Renato G Santos

R Scott Kern

Warren J Robinett

Yu-Min Houng

Wenhua Zhang

Michael Ragan Krames

Norman Paul Jouppi

John Paul Strachan

David M Bloom

Andreas G Weber

Gregory J May

Gregory Stuart Snider

Gilberto Medeiros Ribeiro

Minxian Max Zhang

Jean Tourrilhes

William R Trutna, Jr

Jun Gao

William M Tong

David K Donald

Hans S Cho

Wei Yi

Dmitri Borisovich Strukov

Yawara Kaneko

Julien Borghetti

Tirumala R Ranganath

Jason Blackstock

Changhua Chen

Marco Florentino

Geoffrey Martin Lyon

Joseph Straznicky

Guodong Zhang

Brian C Samuels

Ghulam Hasnain

Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

Microstructure enhanced absorption photosensitive devices

Microstructure enhanced photodector arrangements uses a CMOS image sensor (CIS) wafer of crystalline Si and a CMOS Logic Processor (CLP) wafer stacked on each other for electrical interaction. The wafers can be fabricated separately and stacked or can be regions of the same monolithic chip. The image can be a time-of-flight image. Bayer arrays are enhanced with microstructure holes. Avalanche photodiodes, single photon avalanche photodiodes and phototransistors can be laterally and/or vertically doped. Photodetectors/photosensors can have slanted sidewalls for improved optical confinement and reduced crosstalk.

Microstructures of micro and/or nano holes on one or more surfaces enhance photodetector optical sensitivity. Arrangements such as a CMOS Image Sensor (CIS) as an imaging LIDAR using a high speed photodetector array wafer of Si, Ge, a Ge alloy on SI and/or Si on Ge on Si, and a wafer of CMOS Logic Processor (CLP) ib Si fi signal amplification, processing and/or transmission can be stacked for electrical interaction. The wafers can be fabricated separately and then stacked or can be regions of the same monolithic chip. The image can be a time-of-flight image. Bayer arrays can be enhanced with microstructure holes. Pixels can be photodiodes, avalanche photodiodes, single photon avalanche photodiodes and phototransistors on the same array and can be Ge or Si pixels. The array can be of high speed photodetectors with data rates of 56 Gigabits per second, Gbps, or more per photodetector.

Lateral and vertical microstructure enhanced photodetectors and avalanche photodetectors are monolithically integrated with CMOS/BiCMOS ASICs and can also be integrated with laser devices using fluidic assembly techniques. Photodetectors can be configured in a vertical PIN arrangement or lateral metal-semiconductor-metal arrangement where electrodes are in an inter-digitated pattern. Microstructures, such as holes and protrusions, can improve quantum efficiency in silicon, germanium and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.

Resistive RAM (RRAM) devices having increased reliability and related manufacturing methods are described. Greater reliability of RRAM cells over time can be achieved by avoiding direct contact of metal electrodes with the device switching layer.

Resistive random-access memory with protected switching layer

Examples include generating a signal using a modulatable source. The signal may be propagated using a multi-mode fiber to receive the signal from the modulatable source. The fiber has a diameter d and a far-field divergence angle associated with the propagated signal that corresponds to a product of the diameter (d) and the far-field divergence angle. The product may be substantially between 1 micron radian and 4 micron radian. In some examples, the propagated signal may be received at a receiver from the multi-mode fiber.

Multimode fiber for modulatable source

Microstructure enhanced photodiodes and avalanche photodiodes are monolithically integrated with CMOS/BiCMOS circuitry such as transimpedance amplifiers. Microstructures, such as holes, can improve quantum efficiency in silicon and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.

Resistive RAM (RRAM) devices having increased reliability and related manufacturing methods are described. Greater reliability of RRAM cells over time can be achieved by avoiding direct contact of metal electrodes with the device switching layer. The contact can be avoided by cladding the switching layer in a material such as silicon or using electrodes that may contain metal but have regions that are adjacent the switching layer and lack free metal ions except for possible trace amounts.

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Shih-Yuan Wang