Taiwan Semiconductor Manufacturing Comp. Ltd.

Shih-Yi Hsiao

Hun-Jan Tao

Peng-Fu Hsu

Fang-Cheng Chen

Baw-Ching Perng

Chih-Cheng Wang

Yue-Ho Hsieh

A wet etchant solution composition and method for etching oxides of hafnium and zirconium including at least one solvent present at greater than about 50 weight percent with respect to an arbitrary volume of the wet etchant solution; at least one chelating agent present at about 0.1 weight percent to about 10 weight percent with respect to an arbitrary volume of the wet etchant solution; and, at least one halogen containing acid present from about 0.0001 weight percent to about 10 weight percent with respect to an arbitrary volume of the wet etchant solution.

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Chiai, Taiwan

Shih-Yi Hsiao