Norton Company

Shih-Yee Kuo

Hyun-Sam Cho

Ralph M Horton

James T Hoggins

Frank J Csillag

Cristan Ellison-Hayashi

Morteza Zandi

The disclosure is directed to a bonding tool for use primarily in thermo-compression bonding of electronic circuit components and to a method of making the bonding tool. In one form of the disclosure, a holder is provided and has a substrate mounted at an end thereof. The holder is adapted to receive a heating element. A polycrystalline diamond film is disposed on the substrate, the film preferably being deposited by chemical vapor deposition. In a disclosed embodiment the substrate is a material selected from the group consisting of polycrystalline diamond, cemented tungsten carbide, silicon carbide, cubic boron nitride, and tungsten. In a further form of the disclosure, a ceramic substrate is provided which has a favorable thermal conductivity property as well as substantial electrical conductivity sufficient to permit shaping by electrical discharge machining ('EDM').

Bonding tool and its fabrication

Finely divided silicon carbide materials, particularly powders, whiskers and short fibers, are provided with a titanium nitride surface coating by the process of (i) placing a low carbon diffusivity layer atop the silicon carbon, (ii) placing a titanium metal coating atop the low carbon diffusivity layer, and (iii) nitriding the titanium metal.

Titanium nitride coated silicon carbide materials with an interlayer

A superhard form of boron suboxide (B.sub.x O) comprises at least about 95% by weight of polycrystalline B.sub.6 O and has a KHN.sub.100 value of at least about 3800 kg/mm.sup.2. A method for forming the superhard boron suboxide comprises mixing stoichiometric amounts of boron oxide (B.sub.2 O.sub.3) powder and boron powder and subjecting the mixture to a temperature of about 1800.degree. C. to about 2200.degree. C. and a pressure of about 2,000 to about 6,000 psi while encapsulated by boron nitride. The boron powder comprises about 90 to 95% by weight of elemental boron (B), and at least about 1% by weight of a sintering aid, such as Mg.

Boron suboxide material and method for its preparation

Finely divided silicon carbide materials, particularly powders, whiskers and short fibers, are provided with a titanium nitride surface coating by the process of (i) placing a low carbon diffusivity layer atop the silicon carbide, (ii) placing a titanium metal coating atop the low carbon diffusivity layer, and (iii) nitriding the titanium metal.

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Salt Lake City, UT, United States of America

Shih-Yee Kuo