Taiwan Semiconductor Manufacturing Comp. Ltd.

National Taiwan University

Shih-Ya Lin

Samuel C Pan

I-Hsieh Wong

Fang-Liang Lu

CheeWee Liu

A semiconductor device includes a first layer that includes a first semiconductor material disposed on a semiconductor substrate, and a second layer of a second semiconductor material disposed on the first layer. The semiconductor substrate includes Si. The first semiconductor material and the second semiconductor material are different. The second semiconductor material is formed of an alloy including a first element and Sn. A surface region of an end portion of the second layer at both ends of the second layer has a higher concentration of Sn than an internal region of the end portion of the second layer. The surface region surrounds the internal region.

Growing community of inventors

Hsinchu, Taiwan

Shih-Ya Lin