Taiwan Semiconductor Manufacturing Comp. Ltd.

Shih-Shiung Chen

Yu-Lung Yeh

Ming-Chi Wu

Kun-Yu Lin

Chien-Nan Tu

Chun-Chieh Fang

Chien-Chang Huang

Chien Nan Tu

Chi-Yuan Wen

Hsing-Chih Lin

Kuan-Chi Tsai

Wei-Kung Tsai

Kuo-Yu Cheng

Ji-Heng Jiang

Chih-Ping Chao

Ying-Chen Chao

Ruei-Hung Jang

Ho-Ku Lan

Ming-Fa Chen

Chen-Cheng Kuo

Yuan-Ko Hwang

Fei-Yun Chen

Hung-Chih Chen

Tsung-Chi Hsieh

Mingchu King

Chih-Lin Ying

Bo-Chang Su

Tien-Hsing Woo

Hao-Chih Yuan

Shun-Liang Hsu

Wen-Hung Tseng

Yong-En Syu

Tzu-Yang Wu

Jian Wu

Ming-Kuo Yu

Wei-Tung Huang

Keng-Yu Chen

Shao-Yu Chen

Ming-Chu King

Hsiang-Chung Liu

Nan-Huan Kuan

Kern-Shen Chou

Jung-Yu Cheng

Chun-Li Fang

Jen-Shian Shieh

A method includes etching a semiconductor substrate to form a trench, filling a dielectric layer into the trench, with a void being formed in the trench and between opposite portions of the dielectric layer, etching the dielectric layer to reveal the void, forming a diffusion barrier layer on the dielectric layer, and forming a high-reflectivity metal layer on the diffusion barrier layer. The high-reflectivity metal layer has a portion extending into the trench. A remaining portion of the void is enclosed by the high-reflectivity metal layer.

Deep trench isolation structures resistant to cracking

An LDMOS device comprises a well region, first and second implant regions, a gate electrode, first and second source/drain regions, a first STI region, and a first DTI region. The well region is in a substrate and of a first conductivity type. The first implant region is in the substrate and of a second conductivity type. The second implant region is in the well region and of the first conductivity type. The gate electrode extends from above the well region to above the first implant region. The first and second source/drain regions are respectively in the first and second implant regions. The first STI region laterally extends from the second implant region to directly below the gate electrode. The first DTI region extends downwards from a bottom surface of the first STI region into the well region. The first DTI region vertically overlaps with the gate electrode.

LDMOS device having isolation regions comprising DTI regions extending from a bottom of STI region

A semiconductor device includes a device layer, a semiconductor layer, a sensor element, a dielectric layer, a color filter layer, and a micro-lens. The semiconductor layer is over the device layer. The semiconductor layer has a plurality of microstructures thereon. Each of the microstructures has a substantially triangular cross-section. The sensor element is under the microstructures of the semiconductor layer and is configured to sense incident light. The dielectric layer is over the microstructures of the semiconductor layer. The color filter layer is over the dielectric layer. The micro-lens is over the color filter layer.

CMOS image sensor structure with microstructures on backside surface of semiconductor layer

An image sensor device is provided. The image sensor device includes a semiconductor substrate having a front surface, a back surface opposite to the front surface, and a light-sensing region close to the front surface. The image sensor device includes an insulating layer covering the back surface and extending into the semiconductor substrate. The protection layer has a first refractive index, and the first refractive index is less than a second refractive index of the semiconductor substrate and greater than a third refractive index of the insulating layer, and the protection layer conformally and continuously covers the back surface and extends into the semiconductor substrate. The image sensor device includes a reflective structure surrounded by insulating layer in the semiconductor substrate.

Image sensor device with reflective structure

An image sensor device is provided. The image sensor device includes a semiconductor substrate having a first side, a second side opposite to the first side, and at least one light-sensing region close to the first side. The image sensor device includes a dielectric feature covering the second side and extending into the semiconductor substrate. The dielectric feature in the semiconductor substrate surrounds the light-sensing region. The image sensor device includes a reflective layer in the dielectric feature in the semiconductor substrate, wherein a top portion of the reflective layer protrudes away from the second side, and a top surface of the reflective layer and a top surface of the insulating layer are substantially coplanar.

Image sensor device with reflective layer

CMOS image sensor structure with microstructures formed on semiconductor layer

Some embodiments of the present disclosure are directed to a device. The device includes a substrate comprising a silicon layer disposed over an insulating layer. The substrate includes a transistor device region and a radio-frequency (RF) region. An interconnect structure is disposed over the substrate and includes a plurality of metal layers disposed within a dielectric structure. A handle substrate is disposed over an upper surface of the interconnect structure. A trapping layer separates the interconnect structure and the handle substrate.

Trap layer substrate stacking technique to improve performance for RF devices

An image sensor with an absorption enhancement semiconductor layer is provided. In some embodiments, the image sensor comprises a front-side semiconductor layer, an absorption enhancement semiconductor layer, and a back-side semiconductor layer that are stacked. The absorption enhancement semiconductor layer is stacked between the front-side and back-side semiconductor layers. The absorption enhancement semiconductor layer has an energy bandgap less than that of the front-side semiconductor layer. Further, the image sensor comprises a plurality of protrusions and a photodetector. The protrusions are defined by the back-side semiconductor layer, and the photodetector is defined by the front-side semiconductor layer, the absorption enhancement semiconductor layer, and the back-side semiconductor layer.

Image sensor with an absorption enhancement semiconductor layer

A method for forming an image sensor device is provided. The method includes providing a semiconductor substrate including a front surface, a back surface opposite to the front surface, at least one light-sensing region close to the front surface, and a first trench surrounding the light-sensing region. The method includes forming an insulating layer over the back surface and in the first trench. A void is formed in the insulating layer in the first trench, and the void is closed. The method includes removing the insulating layer over the void to open up the void. The opened void forms a second trench partially in the first trench. The method includes filling a reflective structure in the second trench. The reflective structure has a light reflectivity ranging from about 70% to about 100%.

Method for forming image sensor device

An image sensor device is provided. The image sensor device includes a semiconductor substrate having a front surface, a back surface opposite to the front surface, at least one light-sensing region close to the front surface, and a first trench surrounding the light-sensing region. The first trench has an inner wall and a bottom surface. The image sensor device includes an insulating layer covering the back surface, the inner wall, and the bottom surface. A thickness of a first upper portion of the insulating layer in the first trench increases in a direction away from the front surface, and the insulating layer has a second trench partially in the first trench. The image sensor device includes a reflective structure filled in the second trench. The reflective structure has a light reflectivity ranging from about 70% to about 100%.

Image sensor device with reflective structure and method for forming the same

A semiconductor device is operated for sensing incident light and includes a substrate, a device layer, a semiconductor layer and a color filter layer. The device layer is disposed on the substrate and includes light-sensing regions. The semiconductor layer overlies the device layer and has a first surface and a second surface opposite to the first surface. The first surface is adjacent to the device layer. The semiconductor layer includes microstructures on the second surface. The color filter layer is disposed on the second surface of the semiconductor layer.

Method for forming CMOS image sensor structure

Growing community of inventors

Tainan, Taiwan

Shih-Shiung Chen