United Microelectronics Corp.

Fujian Jinhua Integrated Circuit Co., Ltd.

Shih-Kuei Yen

Feng-Yi Chang

Fu-Che Lee

Shih-Fang Tzou

Chi-Mao Hsu

Tsuo-Wen Lu

Shu-Yen Chan

Tien-Chen Chan

Ger-Pin Lin

Kuan-Chun Lin

Hung-Lin Shih

Le-Tien Jung

Hsuan-Tung Chu

Li-Wei Liu

Ming-Che Li

Guan-Yi Liou

Huai-Jin Hsing

A flash includes a substrate comprising an active region and two electron storage structures disposed at two sides of the active region, wherein each of the electron storage structures comprises a silicon oxide/silicon nitride/silicon oxide composite layer. A buried gate is embedded in the active region, wherein the buried gate only consists of a control gate and a gate dielectric layer, and the gate dielectric layer is formed by a single material. Two source/drain doping regions are disposed in the active region at two sides of the buried gate.

DRAM and flash structure and method of fabricating the same

A method of fabricating a buried word line structure includes providing a substrate with a word line trench therein. Two source/drain doped regions are disposed in the substrate at two sides of the word line trench. Later, a silicon oxide layer is formed to cover the word line trench. A titanium nitride layer is formed to cover the silicon oxide layer. Next, a tilt ion implantation process is performed to implant silicon atoms into the titanium nitride layer to transform part of the titanium nitride layer into a titanium silicon nitride layer. A conductive layer is formed in the word line trench. Subsequently, part of the conductive layer, part of the titanium silicon nitride layer and part of the silicon oxide layer are removed to form a recess. Finally, a cap layer fills in the recess.

Buried word line structure and method of making the same

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Tainan, Taiwan

Shih-Kuei Yen