Vanguard International Semiconductor Corporation

Shih-Kai Wu

Jui-Chun Chang

Chia-Ming Hsu

Li-Yang Hong

Cheng-Yu Wang

A semiconductor device includes a substrate, a semiconductor layer, a doped region, a device region, a first isolation structure, a second isolation structure and a terminal. The semiconductor layer is disposed over the substrate. The doped region is disposed in the semiconductor layer. The device region is disposed on the doped region and includes a source, a drain and a gate. The first isolation structure is disposed in the semiconductor layer and surrounds the doped region. The second isolation structure surrounds the first isolation structure and is spaced apart from the first isolation structure. The terminal is disposed between the first isolation structure and the second isolation structure, and is equipotential with the source.

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Hsinchu, Taiwan

Shih-Kai Wu