Chipmos Technologies Inc.

Shih Jye Cheng

Tung Bao Lu

The present disclosure provides a method for manufacturing a semiconductor structure. The method includes forming a conductive pad on a semiconductor die; forming a seed layer over the conductive pad; defining a first mask layer over the seed layer; and forming a silver alloy bump body in the first mask layer. The forming a silver alloy bump body in the first mask layer includes operations of preparing a first cyanide-based bath; controlling a pH value of the first cyanide-based bath to be within a range of from about 6 to about 8; immersing the semiconductor die into the first cyanide-based bath; and applying an electroplating current density of from about 0.1 ASD to about 0.5 ASD to the semiconductor die.

Semiconductor structure having a silver alloy bump body and manufacturing method thereof

A semiconductor structure includes a device, a conductive pad on the device, and a AgYalloy bump over the conductive pad. The Y of the AgYbump comprises metals forming complete solid solution with Ag at arbitrary weight percentage, and the X of the AgYalloy bump is in a range of from about 0.005 to about 0.25. A difference between one standard deviation and a mean value of a grain size distribution of the AgYalloy bump is in a range of from about 0.2 &#x3bc;m to about 0.4 &#x3bc;m. An average grain size of the AgYalloy bump on a longitudinal cross sectional plane is in a range of from about 0.5 &#x3bc;m to about 1.5 &#x3bc;m.

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Hsinchu, Taiwan

Shih Jye Cheng