Tekcore Co., Ltd.

Shih-Hung Lee

Cheng-Hsien Li

Nien-Tze Yeh

Wei-Jung Chung

Wen-Hsien Lin

Yu-Chuan Liu

Wen-Chieh Hsu

Tai-Chun Wang

Jenn-Hwa Fu

The present application describes a vertical light-emitting diode (VLED) and its manufacture method that use the combination of a reflective layer, a transparent conducting layer and transparent dielectric layer as structural layers for promoting uniform current distribution and increasing light extraction. In the VLED, a transparent conducting layer is formed on a first outer surface of a stack of multiple group III nitride semiconductor layers. A transparent dielectric layer is then formed on a side of the transparent conducting layer opposite the side of the multi-layer structure. A first electrode structure is then formed on the transparent dielectric layer in electrical contact with the transparent conducting layer via a plurality of contact windows patterned through the transparent dielectric layer. The transparent conducting layer and the transparent dielectric layer are used as structural layers for improving light extraction.

Vertical light-emitting diode

In a method of manufacturing a vertical type light-emitting diode, a multilayered structure of group III nitride semiconductor compounds is epitaxy deposited on an irregular surface of a substrate. The substrate is then removed to expose an irregular surface of the multilayered structure corresponding to the irregular surface of the substrate. A portion of the exposed irregular surface of the multilayered structure is then etched for forming an electrode contact surface on which an electrode layer is subsequently formed. With this method, no specific planarized region is required on the irregular surface of the substrate. As a result, planarization treatment of the substrate is not necessary. The same substrate with the irregular surface can be reused for fabricating vertical and horizontal light-emitting diodes.

Method of manufacturing a vertical type light-emitting diode

The present invention discloses a method for fabricating a light emitting diode element, which incorporates an epitaxial process with an etching process to etch LED epitaxial layers bottom up and form side-protrudent structures, whereby the LED epitaxial layers have non-rectangular inclines, which can solve the problem of total reflection and promote light-extraction efficiency. Further, the method of the present invention has a simple fabrication process, which can benefit mass production and lower cost.

Method for fabricating light emitting diode element

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Caotun, Taiwan

Shih-Hung Lee