Richtek Technology Corporation

Taiwan Semiconductor Manufacturing Comp. Ltd.

Shih-Hui Chen

Chung-Lung Pai

Jeng Gong

Chi-Hung Kao

Jing-Meng Liu

Tsung-Yi Huang

Hung-Der Su

Chun-Yen Huang

Chun-Tsung Chen

Chun-Hsiung Chang

Kuo-Shu Huang

Tsan-Huei Wu

Yang-Ping Hung

Kuo-Hsu Huang

Meng-Chi Wu

Jia-Rong Yu

A LED driving topology includes a LED array and a current source connected in series between two power inputs receiving a positive voltage and a negative voltage respectively. This topology increases the voltage difference across the LED array and hence has the capability of lighting up more serially connected LEDs, without requiring an additional boost circuit or a high voltage. In addition, the circuit of the current source can be made by a low-voltage manufacturing process.

LED driving topology, light source module based thereon, and digital camera having the same

The present invention discloses a charger control circuit and a charger control method for controlling a charger having a transformer, the transformer including a primary winding and a secondary winding. The charger control circuit comprises: a power switch coupled to the primary winding; a switch control circuit controlling the operation of the power switch; and a detection circuit which generates a signal according to a voltage at a node between the power switch and the primary winding, and supplies the signal to the switch control circuit.

Charger control circuit and charger control method

A method, which is for determining switching state of a transistor-based switching device that includes a set of transistors, includes the steps of: applying a bias voltage to a transistor having a fastest response so as to dispose the transistors in the set in a desired transistor state; detecting a voltage level at a transistor having a slowest response to the bias voltage; and comparing the detected voltage level with a predetermined threshold voltage level in order to determine the switching state of the switching device. A transistor-based switching device is also disclosed.

Method for determining switching state of a transistor-based switching device

Within both a lateral double diffused metal oxide semiconductor (LDMOS) device, and a method for fabrication thereof, there is formed a buried layer of polarity equivalent with a well region within which is formed a drain region. The buried layer is formed laterally aligned with respect to the well region, and separated therefrom by a portion of an epitaxial layer. The lateral double diffused metal oxide semiconductor (LDMOS) device exhibits enhanced electrical performance.

Lateral double diffused metal oxide semiconductor (LDMOS) device with aligned buried layer isolation layer

A method of manufacturing a LDHOS transistor having a dielectric block under the gate electrode. A high voltage well, low voltage well (LV PW), and field oxide regions having bird beaks are provided in a substrate and overlay the high voltage well and the low voltage well. In a key step, a dielectric block is formed over the bird beaks of the field oxide regions. A gate is formed over the dielectric block. After this the LDMOS device is completed. The invention's dielectric block covers the bird's beaks of the field oxide regions and enhances the e-field tolerance. The invention's e-field enhancement dielectric block relieves the e-field near the bird's beak, thus increasing the breakdown voltage of the transistor.

Method of fabricating a LDMOS transistor

Growing community of inventors

Kaohsiung, Taiwan

Shih-Hui Chen