Advanced Optoelectronic Technology, Inc.

Other

Shih-Hsiung Chan

Po-Min Tu

Shih-Cheng Huang

Jian-Shihn Tsang

Wen-Yu Lin

Jan-Dar Guo

Chih-Peng Hsu

Peng-Yi Wu

Simon M Sze

Ying-Chao Yeh

Tzu-Chien Hung

Chia-Hui Shen

Wei-Chi Lai

Chih-Pang Ma

Yu-Shan Wu

A structure of semiconductor device includes a first semiconductor layer; an intermediate layer on a surface of said first semiconductor layer; a second semiconductor layer on said intermediate layer, wherein said intermediate layer and said second semiconductor layer are integrated to a set of sub-structures; and a semiconductor light emitting device on said second semiconductor layer.

Light-emitting semiconductor device having sub-structures for reducing defects of dislocation therein

A method for manufacturing a polychromatic light emitting diode device, comprising steps of providing an epitaxial substrate and forming a multiple semiconductor layer on the epitaxial substrate, wherein the multiple semiconductor layer comprises an n-type semiconductor layer, a p-type semiconductor layer and an active layer. The active layer emits light of a first wavelength. Thereafter a first wavelength conversion layer is formed on the multiple semiconductor layer. The first wavelength conversion layer is made of semiconductor and absorbs a portion of the light of a first wavelength and emits light of a second wavelength, wherein the second wavelength is longer than the first wavelength.

Method for manufacturing polychromatic light emitting diode device having wavelength conversion layer made of semiconductor

A photoelectric device having Group III nitride semiconductor includes a conductive layer, a metallic mirror layer located on the conductive layer, and a Group III nitride semiconductor layer located on the metallic mirror layer. The Group III nitride semiconductor layer defines a number of microstructures thereon. Each microstructure includes at least one angled face, and the angled face of each microstructure is a crystal face of the Group III nitride semiconductor layer.

Photoelectric device having group III nitride semiconductor

A method for fabricating a light emitting diode includes steps of: forming a light emitting structure of the light emitting diode on a substrate; arranging a photoresist layer on a first semiconductor layer of the light emitting structure; depositing a plurality of dielectric material structures on the first semiconductor layer through a plurality of voids of the photoresist layer; removing the photoresist layer to form a plurality of voids between the plurality of dielectric material structures; forming a plurality of metal material structures in the plurality of voids; and forming a reflective layer on the plurality of dielectric material structures and the plurality of metal material structures.

Method for fabricating light emitting diode

The present invention pertains to a light emitting diode with high luminance and method therefor, and specially to a light emitting diode having a selectively highly-doped low resistive layer of InGaAlP. The selectively highly-doped low resistive layer may be grown by the current epitaxy technique. Therefore, the light emitting diode of the present application may be mass produced, thus having industrial applicability.

Light emitting diode with high luminance and method therefor

The present invention relates to a light emitting diode with high luminance and method for making the same, and more particularly to a light emitting diode having a transparent window layer which is formed by a semiconductor film of nitrogen-containing compounds. The present invention is mainly directed to growing a window layer of a light emitting diode with a nitrogen-containing compound on the double heterostructure of InGaAlP. Since the energy gap of the nitrogen-containing compound is greater than that of the light emitted from the active layer and is smaller than that of GaP, it is easily to be doped and to form metallic ohmic electrode. Therefore, it is suitable to form a window layer, thereby increasing the light emitting efficiency of a light emitting diode. In addition, the nitrogen-containing compounds can be formed by the current MBE or OMVPE techniques. Therefore, the light emitting diode can be mass-produced and does have industrial applicability.

Light emitting diode with high luminance and method for making the same

A new method for manufacturing a Group III metal nitride epitaxial wafer comprises providing a first nitrogen-contained gas source, providing a second Group III metal trichloride--containing gas source, and causing said first gas to react with second gas in a heating region, thereby forming a Group III metal nitride epitaxial layer on a substrate. The formed epitaxial wafer can serve as a substrate of a laser diode.

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Hsinchu, Taiwan

Shih-Hsiung Chan