Industrial Technology Research Institute

Au Optronics Corporation

Chunghwa Picture Tubes, Ltd.

Hannstar Display Corporation

Chi Mei Optoelectronics Corporation

Taiwan Tft Lcd Association

Tpo Displays Corporation

Tpo Dispalys Corp.

Shih-Hsiang Lai

Shin-Chuan Chiang

Hsiang-Yuan Cheng

Chin-Chih Yu

Bor-Chuan Chuang

Fu-Ching Tung

Ching-Chiun Wang

An evaporation method in this disclosure is adapted for performing an evaporation process upon a surface of an evaporation target substrate. In an embodiment, an evaporation source plate is arranged to be heated by a heater so as to evaporate an evaporation material to its gaseous state, and then enable the gaseous evaporation material to travel passing through holes of a shutter device and thus spread toward the surface of the evaporation target substrate for depositing a film. Moreover, the evaporation method uses a transmission device for controlling the opening/closing of the holes, and there is a heating area formed at a position between the shutter device and the evaporation source plate for allowing the evaporation source plate, the plural holes, the heating area, the evaporation material and the heater to be arranged parallel to one another from the top to bottom.

Evaporation method

A thin film transistor is provided. The thin film transistor includes a substrate, a gate, a source/drain, an insulating layer, and a semiconductor active layer. The gate and the source/drain are respectively deposited on the substrate and are separated by the insulating layer on the substrate. The semiconductor active layer connects the source and the drain. The material of the semiconductor active layer is a semiconductor precursor which produces semiconductor property after being irradiated by a light source. A liquid crystal display which includes the above thin film transistor is also provided.

Thin film transistor with semiconductor precursor and liquid crystal display having the same

A manufacturing method of an active layer of a thin film transistor is provided. The method includes following steps. First a substrate is provided, and a semiconductor precursor solution is then prepared through a liquid process. Thereafter, the semiconductor precursor solution is provided on the substrate to form a semiconductor precursor thin film. After that, a light source is used to irradiate the semiconductor precursor thin film to remove residual solvent and allow the semiconductor precursor thin film to produce semiconductor property, so as to form a semiconductor active layer.

Method of fabricating active layer of thin film transistor

Growing community of inventors

Taipei County, Taiwan

Shih-Hsiang Lai