Taiwan Semiconductor Manufacturing Comp. Ltd.

Shih-Hao Tseng

Hung-Jui Kuo

Ming-Che Ho

Chia-Hung Liu

A semiconductor package includes a first integrated circuit, a first passivation layer, a second passivation layer, a thermal pattern, an adhesive layer and a second integrated circuit. The first integrated circuit is encapsulated by an encapsulant. The first passivation layer is disposed over the first integrated circuit and the encapsulant. The second passivation layer is disposed over the first passivation layer. The thermal pattern is disposed in the first passivation layer and the second passivation layer. The adhesive layer is disposed over the second passivation layer and in direct contact with the thermal pattern. The second integrated circuit is adhered to the first integrated circuit through the adhesive layer.

Semiconductor packages and method of manufacturing the same

A manufacturing method of a semiconductor package includes the following steps. An integrated circuit structure is provided, wherein the integrated circuit structure includes an integrated circuit and a metallization layer covering a back surface of the integrated circuit. An encapsulation material is provided to laterally encapsulate the integrated circuit structure. A redistribution structure is provided over the integrated circuit structure and the encapsulation material, wherein the redistribution structure includes a thermal metal layer furthermost from the integrated circuit structure, wherein the thermal metal layer is thermally coupled to the metallization layer. A solder layer is provided over the thermal metal layer, wherein the solder layer is thermally coupled to the thermal metal layer.

Manufacturing method of semiconductor package

In an embodiment, a device includes: an integrated circuit die; a through via adjacent the integrated circuit die; a molding compound encapsulating the integrated circuit die and the through via; and a redistribution structure including: a first conductive via extending through a first dielectric layer, the first conductive via electrically connected to the integrated circuit die, the first dielectric layer being over the integrated circuit die, the through via, and the molding compound; and a first conductive line over the first dielectric layer and the first conductive via, the first conductive via extending into the first conductive line.

Semiconductor package and method

A manufacturing method of a semiconductor package including the following steps is provided. A redistribution structure is formed over an encapsulated semiconductor device carried by a carrier, wherein the redistribution structure includes an organic polymer layer and a redistribution circuit layer electrically connected to the semiconductor device. An inorganic protection layer is formed to entirely cover an upper surface of the redistribution structure, wherein an oxygen and/or water vapor permeability of the inorganic protection layer is substantially lower than an oxygen and/or vapor permeability of the organic polymer layer. An adhesive is formed on the inorganic protection layer. An insulating cover is adhered on the inorganic protection layer through the adhesive.

Manufacturing method of a semiconductor package

A semiconductor package includes a first integrated circuit structure, a first encapsulation material laterally encapsulating the first integrated circuit structure, a first redistribution structure, a solder layer, a second integrated circuit structure, a second encapsulation material second laterally encapsulating the second integrated circuit structure and a second redistribution structure. The first integrated circuit structure includes a first metallization layer. The first redistribution structure is disposed over the first integrated circuit structure and first encapsulation material. The first metallization layer faces away from the first redistribution structure and thermally coupled to the first redistribution structure. The solder layer is dispose over the first redistribution structure. The second integrated circuit structure is disposed on the first redistribution structure and includes a second metallization layer in contact with the solder layer. The second redistribution structure is disposed over the second integrated circuit structure and the second encapsulation material.

Semiconductor package with separate electric and thermal paths

A semiconductor package includes an encapsulated semiconductor device, a redistribution structure, and a protection layer. The encapsulated semiconductor device includes a semiconductor device and an encapsulating material encapsulating the semiconductor device. The redistribution structure is disposed on the encapsulated semiconductor device and includes a dielectric layer and a redistribution circuit layer electrically connected to the semiconductor device. The protection layer at least covers the dielectric layer, wherein an oxygen permeability or a water vapor permeability of the protection layer is substantially lower than an oxygen permeability or a vapor permeability of the dielectric layer.

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Hsinchu, Taiwan

Shih-Hao Tseng