Vanguard International Semiconductor Corporation

Shih-Hao Liu

Chih-Cherng Liao

Wu-Hsi Lu

Chung-Ren Lao

Ming-Cheng Lo

Wei-Lun Chung

Chih-Wei Lin

Yun-Chou Wei

Hsin-Hui Lee

Jui-Chun Chang

Yin Jen Chen

Ching-Yi Hsu

Hsueh-Jung Lin

Wen-Chih Lu

Yu-Che Tsai

Ting-Jung Lu

Leuh Fang

Yen-Shih Ho

Shih-Chang Huang

A method of fabricating a semiconductor device includes providing a substrate that includes a handle substrate, a bottom cladding layer, and a semiconductor layer stacked in sequence from bottom to top. The substrate includes an electronic integrated circuit (EIC) region and a photonic integrated circuit (PIC) region. A thermal oxidation process is performed on the semiconductor layer in the PIC region to form an oxide layer. A first thickness of the semiconductor layer in the EIC region is greater than a second thickness of the semiconductor layer below the oxide layer. The oxide layer is removed and a PIC structure is formed on the bottom cladding layer in the PIC region. An EIC structure is formed on the bottom cladding layer in the EIC region. An interconnect structure is formed to be electrically connected to the PIC and EIC structures.

Semiconductor device and fabrication method thereof

A semiconductor device is provided. The semiconductor device includes a substrate and a light-collimating layer. The substrate has a plurality of pixels. The light-collimating layer is disposed on the substrate, and the light-collimating layer includes a transparent material layer, a first light-shielding layer, a second light-shielding layer and a plurality of transparent pillars. The transparent material layer covers the pixels. The first light-shielding layer is disposed on the substrate and the first light-shielding layer has a plurality of holes corresponding to the pixels. The second light-shielding layer is disposed on the first light-shielding layer. The transparent pillars are disposed in the second light-shielding layer.

Semiconductor device including light-collimating layer and biometric device using the same

A semiconductor device includes a conductive substrate and an encapsulation structure. The conductive substrate has a plurality of pixels. The encapsulation structure is disposed on the conductive substrate and includes at least one light-collimating unit. The light-collimating unit includes a transparent substrate and a patterned light-shielding layer. The patterned light-shielding layer is disposed on the transparent substrate. The patterned light-shielding layer has a plurality of holes disposed to correspond to the pixels.

Color filters disposed in holes of a light collimator, manufacturing method of the same and biometric identification apparatus using the same

Semiconductor device including light-collimating layer

An optical sensor includes a substrate, a first/second/third well disposed in a sensing region, a deep trench isolation structure, and a passivation layer. The substrate has a first conductivity type and includes the sensing region. The first well has a second conductivity type and a first depth. The second well has the second conductivity type and a second depth. The third well has the first conductivity type and a third depth. The deep trench isolation structure is disposed in the substrate and surrounding the sensing region, wherein the depth of the deep trench isolation structure is greater than the first depth, the first depth is greater than the second depth, and the second depth is greater than the third depth. The passivation layer is disposed over the substrate, wherein the passivation layer includes a plurality of protruding portions disposed directly above the sensing region.

Optical sensor and method for forming the same

A semiconductor device includes a substrate, a well region formed in the substrate, first and second isolation regions formed in the substrate, a dielectric layer formed on the well region, a conductive layer formed on the dielectric layer, a first doped region, an insulating layer, and first and second contact vias. The dielectric layer is disposed between the first and second isolation regions. The first doped region is formed in the well region. The insulating layer is formed on the dielectric layer, the first and second isolation regions, and the first doped region. The first contact via is formed in the insulating layer and electrically connected to the conductive layer. The first contact via is disposed on an overlapping area between the dielectric layer and the conductive layer. The second contact via is formed in the insulating layer and electrically connected to the doped region.

Semiconductor device and method for manufacturing the same

An optical device is provided. The optical device includes a substrate including a plurality of pixel units, a dielectric layer disposed on the substrate, a patterned light-transmitting layer disposed on the dielectric layer and corresponding to the plurality of pixel units, and a plurality of continuous light-shielding layers disposed on the dielectric layer and located on both sides of the patterned light-transmitting layer. A method for fabricating an optical device is also provided.

Optical devices and fabrication method thereof

Embodiments of the disclosure relate to a semiconductor device. The semiconductor device includes a semiconductor substrate, a first metal wiring layer disposed on the semiconductor substrate, an interlayer dielectric layer (ILD) disposed on the first metal wiring layer, a second metal wiring layer disposed on the interlayer dielectric layer, and a first via and a second via disposed in the interlayer dielectric layer. The second via is on the first via, and there is not any metal wiring layer in the interlayer dielectric layer.

Semiconductor device and fingerprint sensor device thereof

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Taoyuan, Taiwan

Shih-Hao Liu