Taiwan Semiconductor Manufacturing Comp. Ltd.

Shih-fen Huang

Chun-Ren Cheng

Ching-Hui Lin

Fu-Chun Huang

Chiahung Liu

Yi-hsien Chang

Po Chen Yeh

YingKit Felix Tsui

Yu-Chi Chang

Hsin-li Cheng

Shu-hui Su

The present disclosure provides a semiconductor device. The semiconductor device includes a first device and a second device disposed adjacent to the first device; a conductive pillar disposed adjacent to the first device or the second device; a molding surrounding the first device, the second device and the conductive pillar; and a redistribution layer (RDL) over the first device, the second device, the molding and the conductive pillar, wherein the RDL electrically connects the first device to the second device and includes an opening penetrating the RDL and exposing a sensing area over the first device.

Semiconductor device and method for forming the same

A semiconductor device is provided. The semiconductor device comprises a first semiconductor die comprising a first capacitor, and a second semiconductor die in contact with the first semiconductor die and comprises a diode. The first semiconductor die and the second semiconductor die are arranged along a first direction, and a diode is configured to direct electrons accumulated at the first capacitor to a ground.

Semiconductor device with capacitor and method for forming the same

Growing community of inventors

HSINCHU COUNTY, Taiwan

Shih-fen Huang