Taiwan Semiconductor Manufacturing Comp. Ltd.

Synaptics Corporation

Shih-Fan Chen

Lin-Yu Huang

Chen-Yi Lee

Sheng-Fu Hsu

Abhijat Goyal

A semiconductor ESD protection device includes a pair of source regions, a pair of gate structures, a drain region, a plurality of first conductive contacts, a plurality of second conductive contacts, a plurality of third conductive contacts, and a dummy structure. The pair of gate structures are disposed between the pair of source regions and extend along a direction. The drain region is disposed between the pair of gate structures. Each of the first conductive contacts is disposed on one of the pair of source regions and is arranged along the direction. Each of the plurality of second conductive contacts is disposed on one of the pair of gate structures. The plurality of third conductive contacts are disposed on the drain region and arranged along the direction. The dummy structure is disposed over the drain region and between the gate structures and between the third conductive contacts.

Semiconductor electrostatic discharge protection device

A voltage clamp is disclosed. The voltage clamp may include a plurality of transistors to limit the voltage between a power supply and ground. In addition, the voltage clamp may include a positive feedback signal to reduce turn-on time of the plurality of transistors.

Growing community of inventors

Hsinchu, Taiwan

Shih-Fan Chen