Epistar Corporation

Shih-Chun Ling

Tsun-Kai Ko

Hsin-Hsien Wu

Yen-Chih Chen

Cheng-Hsiung Yen

Yu-Yao Lin

Chien-Yuan Tseng

Chun-Ta Yu

This application discloses a light-emitting diode comprising a first semiconductor layer, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a semiconductor contact layer on the second semiconductor layer. The second semiconductor layer comprises a first sub-layer and a second sub-layer formed above the first sub-layer, wherein the material of the second sub-layer comprises AlGaN (0&#x3c;x&#x3c;1) and the second sub-layer has a surface comprising a structure of irregularly distributed holes.

Light-emitting diode

A light-emitting device comprises a first type semiconductor layer, a multi-quantum well structure on the first type semiconductor layer, and a second type semiconductor layer on the multi-quantum well structure, wherein the multi-quantum well structure comprises a first portion near the first type semiconductor layer, a second portion near the second type semiconductor layer, and a strain releasing layer between the first portion and the second portion and comprising a first layer including Indium, a second layer including Aluminum on the first layer, and a third layer including Indium on the second layer, wherein the Indium concentration of the third layer is higher than that of the first layer.

Light emitting device

Growing community of inventors

Hsinchu, Taiwan

Shih-Chun Ling