Taiwan Semiconductor Manufacturing Comp. Ltd.

Shih-Ching Lee

Chia-Ta Hsieh

Chen-Ming Huang

Po-Kai Hsu

Josh Lin

Chi-Wei Ho

Shih-Jung Tu

Nai-Chao Su

Kao-Chao Lin

A flash memory device is disposed on a semiconductor substrate. The flash memory device includes flash memory cells arranged in rows and columns. Respective flash memory cells include respective access transistors and respective floating gate transistors. The respective access transistors have respective access gates, and the respective floating gate transistors have respective control gates arranged over respective floating gates. First and second wordlines extend substantially in parallel with one another and correspond to first and second rows which neighbor one another. The first wordline is coupled to access gates of access transistors along the first row. The second wordline is coupled to access gates of access transistors along the second row. Nearest edges of the first and second wordlines include at least one wing which extends laterally outward from a sidewall of one of the first and second wordlines towards a sidewall the other of the first and second wordlines.

Wing-type projection between neighboring access transistors in memory devices

Growing community of inventors

Taichung, Taiwan

Shih-Ching Lee