United Microelectronics Corp.

Shih-Chien Hsu

Cheng-Tung Huang

Sheng-Hao Lin

Tong-Hsin Lee

Chang-Chi Huang

A method of fabricating a gate oxide layer. A mask layer isformed on a substrate. The mask layer and the substrate are patterned to form a trench in the substrate. A portion of the mask layer is removed to expose the substrate at a top edge corner portion of the trench. An insulation layer is formed to fill the trench and covering the exposed substrate and the remaining mask layer. The insulation layer over the remaining mask layer is removed to expose the mask layer. The remaining mask layer is removed to expose the substrate. The exposed substrate is implanted with ions to reduce the oxidation rate. As a result, the substrate at the top edge corner portion of the trench covered with the insulation layer has an oxidation rate higher than the exposed substrate. The insulation layer over the surface level of the substrate is then removed to expose the substrate at the top edge corner portion of the trench. A gate oxide is formed on the substrate with a thickness larger at the top edge corner of the trench than elsewhere.

Growing community of inventors

Taiepi, Taiwan

Shih-Chien Hsu