United Microelectronics Corp.

Shih Chieh Pu

Chih-Chung Wang

Wen-Fang Lee

Nien-Chung Li

Ming-Tsung Lee

Cheng-Hua Yang

A semiconductor device includes a substrate; a deep well region disposed in the substrate; an element region disposed in the substrate and in the deep well region; a drain region disposed in the substrate, in the deep well region, and surrounding the element region; a gate structure disposed on the surface of the substrate, adjacent to the deep well region, and surrounding the drain region; a well region disposed in the substrate, in the deep well region, and surrounding the gate structure; a source region disposed in the substrate, in the well region, and surrounding the gate structure; a body contact region disposed separately from the source region in the well region and surrounding the source region; and an annular doped region disposed separately from the deep well region in the substrate and surrounding the deep well region.

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Taipei, Taiwan

Shih Chieh Pu