Hermes-epitek Corporation

Shih-Chieh Jang

Benson Chao

Chung-Hua Fu

Chih-Ming Hu

Chun-Yen Lin

Chen Hsu

Wen-Sheng Lin

An optoelectronic component with three-dimension quantum well structure and a method for producing the same are provided, wherein the optoelectronic component comprises a substrate, a first semiconductor layer, a transition layer, and a quantum well structure. The first semiconductor layer is disposed on the substrate. The transition layer is grown on the first semiconductor layer, contains a first nitride compound semiconductor material, and has at least a texture, wherein the texture has at least a first protrusion with at least an inclined facet, at least a first trench with at least an inclined facet and at least a shoulder facet connected between the inclined facets. The quantum well structure is grown on the texture and shaped by the protrusion, the trench and the shoulder facet.

Optoelectronic component with three-dimension quantum well structure and method for producing the same

An electrode structure adapted for high applied voltage is provided, which comprises a conductive plate substrate and a covering layer disposed thereon such that a covering percentage of the covering layer over the conductive plate substrate is more than 50%. Since area of the conductive plate substrate covered by the covering layer is larger than the area exposed, the possibility of arcing is reduced and the breakdown voltage applied to the electrode structure may be increased.

Electrode structure adapted for high applied voltage and fabrication method thereof

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Taoyuan County, Taiwan

Shih-Chieh Jang