Taiwan Semiconductor Manufacturing Comp. Ltd.

Shih-Chieh Chao

Li-Wei Yin

Ryan Chia-jen Chen

Chia Ming Liang

Tzu-Wen Pan

Jih-Sheng Yang

Provided are structures and methods for forming structures with sloping surfaces of a desired profile. An exemplary method includes performing a first etch process to differentially etch a gate material to a recessed surface, wherein the recessed surface includes a first horn at a first edge, a second horn at a second edge, and a valley located between the first horn and the second horn; depositing an etch-retarding layer over the recessed surface, wherein the etch-retarding layer has a central region over the valley and has edge regions over the horns, and wherein the central region of the etch-retarding layer is thicker than the edge regions of the etch-retarding layer; and performing a second etch process to recess the horns to establish the gate material with a desired profile.

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Taichung, Taiwan

Shih-Chieh Chao