Advanced Optoelectronic Technology, Inc.

Innolux Corporation

Zhongshan Innocloud Intellectual Property Services Co., Ltd.

Shenzhen Treasure City Technology Co., Ltd.

Shih-Cheng Huang

Po-Min Tu

Ya-Wen Lin

Chia-Hung Huang

Shun-Kuei Yang

Ching-Hsueh Chiu

Tzu-Chien Hung

Wen-Yu Lin

Chien-Chung Peng

Shih-Hsiung Chan

Peng-Yi Wu

Tsau-Hua Hsieh

Chia-Hui Shen

Chien-Shiang Huang

Ying-Chao Yeh

Chun-Hsien Lin

Chih-Peng Hsu

Chih-Jung Liu

Chih-Pang Ma

Chang-Ho Chen

Tzu-Chien Hong

Jong-Jan Lee

Paul-John Schuele

A flip chip light emitting diode includes a semiconductor layer comprising an epitaxial layer an N-semiconductor layer, a light active layer and a P-semiconductor layer arranged from top to bottom in series. A first electrode mounted on the semiconductor layer. A second electrode mounted on the semiconductor layer. A insulating layer mounted on the semiconductor layer. The N-semiconductor layer protrudes away from the epitaxial layer to form a protruding portion. The light active layer and the P-semiconductor layer mounts on the protruding portion in series. The insulating layer mounts between the first electrode and the protruding portion, the light active layer, the P-semiconductor layer and the second electrode. The flip chip light emitting diode also comprises a supporting portion, the supporting portion is mounted on a top surface of the epitaxial layer by a connecting portion. The connecting portion has same or different materials with the supporting portion.

Flip chip light emitting diode and method of manufacturing the same

A light emitting diode includes a first electrode, a second electrode, and an epitaxial structure. The epitaxial structure is arranged on the first electrode, and electrically connects with the first electrode and the second electrode. The second electrode surrounds periphery of the epitaxial structure to reflect light from the epitaxial structure out from the top of the epitaxial structure. A method for manufacturing the light emitting diode is also presented. The light emitting diode and the method increase lighting efficiency of the light emitting diode.

Method for manufacturing light emitting diode

A light emitting diode chip comprises a light emitting diode chip core and a coating layer. The coating layer covers side surfaces of the light emitting diode chip core. And a display composed of the light emitting diode chips is also provided.

Light emitting diode chip and display composed of light emitting diode chips

An LED die includes a substrate, a pre-growth layer, a first insulating layer and a light emitting structure. The pre-growth layer, the first insulating layer and the light emitting structure are formed on the structure that order. The substrate includes a first electrode, a second electrode and an insulating part. The insulating part is formed between the first electrode and the second electrode. The LED die further includes a second insulating layer and a metal layer which are formed around the pre-growth layer. The present disclosure includes a method for manufacturing the LED die.

Light emitting diode die and manufacturing method thereof

A display apparatus and a fabricating method thereof are provided. The display apparatus includes a substrate, a light emitting diode, a first bump, a first insulating layer and a second insulating layer. The light emitting diode has a first surface and a second surface opposite each other, wherein the first surface faces the substrate. The light emitting diode is bonded to the substrate through the first bump. The first insulating layer is disposed on a periphery of the first bump and the light emitting diode, and contacts the first bump and the first surface. The second insulating layer is disposed on the substrate and surrounds at least a portion of the first insulating layer.

Display apparatus and fabricating method thereof

A light emitting diode includes a first electrode, a second electrode and an epitaxial structure. The epitaxial structure is arranged on the first electrode, and electrically connects with the first electrode and the second electrode. The second electrode surrounds periphery of the epitaxial structure to reflect light from the epitaxial structure to emit out from the top of the epitaxial structure. This disclosure also relates to a method for manufacturing the light emitting diode. The light emitting diode and the method help solve the problem of low light efficiency of the light emitting diode.

Light emitting diode and method for manufacturing the same

A flip-chip light emitting diode, including a substrate, an N-type semiconductor layer, a light emitting layer and a P-type semiconductor layer series mounted along a height direction of the flip-chip light emitting diode. A P electrode is formed on the P-type semiconductor layer and an N electrode is formed on the N-type semiconductor. A top surface of the substrate is away from the light emitting layer. A plurality of micron main portions is formed on the top surface. An outer surface of each main body has a plurality of nanometer protrusions. A method for manufacturing the flip chip light emitting diode is also provided.

Flip chip light emitting diode and method for manufacturing the same

An LED die includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a transparent conductive layer, a first electrode and a second electrode. The first semiconductor layer, the active layer, the second semiconductor layer and the transparent conductive layer are successively formed on the substrate. The first electrode and the second electrode respectively is formed on the first semiconductor layer and the transparent conductive layer. A plurality of grooves defined on the first semiconductor layer, and a plurality of hole groups defined on the second semiconductor layer. The present disclosure also provides a method of manufacturing the LED die.

LED die

The present disclosure provides a light emitting diode package including a substrate, a first electrode and a second electrode located on a first surface of the substrate, a plurality of light emitting diodes (LEDs) located between the first electrode and the second electrode, a plurality of retaining ring located on the first surface of the substrate. The LEDs are surrounded by the retaining ring therein. An encapsulation layer is mounted in the retaining ring and covers the LEDs therein. The encapsulation layer includes a first surface and an side surface extending from edges of the first surface. The side of the encapsulation layer contacts an inner surface of the retaining ring. The present disclosre also provides a method for manufacturing the above light emitting diode package.

Light emitting diode package and method thereof

A light emitting diode (LED) chip includes a first semiconductor layer, a first light emitting layer formed on the first semiconductor layer, a second light emitting layer formed on the first light emitting layer, and a second semiconductor layer formed on the second light emitting layer. The first light emitting layer emits light having a first color. The second light emitting layer emits light having a second color different from the first color.

Light emitting diode chip and method of manufacturing same

An epitaxial substrate for growing a lighting emitting structure of a light emitting diode, includes a transparent base, a first buffer layer and a second buffer layer formed on the transparent base. The transparent base includes a first surface and a second surface opposite to the first surface. Plural protrusions are formed on the first surface of the transparent base. Each first buffer layer is formed on the outer surfaces of the plural protrusions. The second buffer layer fills in the recesses defined between two adjacent protrusions, and covers the first buffer layer. The refractive index of the first buffer layer is larger than that of the transparent base, and is less than that of the second buffer layer. This disclosure also relates a method for manufacturing the epitaxial substrate and a light emitting diode having the same.

Epitaxial substrate, method of manufacturing the epitaxial substrate and light emitting diode having epitaxial substrate

An optoelectronic module includes a substrate, an LED and a laser LED formed on the substrate, simultaneously. A method for manufacturing an optoelectronic module includes following steps: providing a sapphire substrate, and forming two adoped GaN layers, an N-type GaN layer, an active layer and a P-type GaN layer on the sapphire substrate in sequence; providing a substrate and forming a metallic adhering layer on the substrate; forming an ohmic contact layer and a reflecting layer on the P-type GaN layer in series; arranging the reflecting layer on the adhering layer; stripping the sapphire substrate and the two doped GaN layers from the N-type GaN layer to form a semiconductor structure; etching a top end of the semiconductor structure to divide the semiconductor structure into a laser LED region and an LED region; forming two N-type electrodes on the LED region and an LED region, respectively.

Optoelectronic module and method for manufacturing the same

An LED die includes a substrate, a first buffer layer, a second buffer layer, a plurality of nanospheres, a first semiconductor layer, an active layer and a second semiconductor layer. The first buffer layer, the second buffer layer, the first semiconductor layer, the active layer and the second semiconductor layer are formed successively on the substrate. The substrate has a plurality of protrusions on a surface thereof. The nanospheres are located on the protrusions and covered by the second buffer layer and located in the second buffer layer. The present disclosure also provides a method of manufacturing an LED die.

LED die and method of manufacturing the same

A single photon source die includes a first semiconductor layer, a plurality of columnar structures formed on the first semiconductor layer, a second semiconductor layer formed on the columnar structures. Each columnar structure includes a bottom layer, a single photon point layer and a connecting layer. The single photon point layer includes a plurality of single photon points.

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Hsinchu, Taiwan

Shih-Cheng Huang