Taiwan Semiconductor Manufacturing Comp. Ltd.

Shih-Cheng Chang

Liang-Chen Lin

Yen-Huei Chen

Jiun Yi Wu

Hsien-Pin Hu

Kuo-Ching Hsu

Kai-Ming Ching

Shih-Kai Lin

Jyun-Lin Wu

Tung-Chin Yeh

Gia-Her Lu

Jin-Lien Lin

Fu-Tsai Hou

Hsien-Wei Chen

Shin-Puu Jeng

Hao-Yi Tsai

Shang-Yun Hou

Hsin-Yu Pan

Chia-Lun Tsai

Shih-Hsun Hsu

Hui-Yu Lee

Chia-Lin Cheng

Benson Liu

Anbiarshy Wu

Kuo-Yin Chen

Ej Wu

The present disclosure provides a semiconductor package including a semiconductor chip and a package substrate. The semiconductor chip includes a substrate, a plurality of conductive pads in the substrate, and a plurality of conductive bumps. Each of the conductive bumps is over corresponding conductive pad. At least one of the conductive bumps proximity to an edge of the semiconductor chip is in contact with at least two discrete regions of the corresponding conductive pad. The package substrate has a concave surface facing the semiconductor chip and joining the semiconductor chip through the plurality of conductive bumps.

Semiconductor package

An interposer circuit includes a substrate and a dielectric layer that is disposed on top of the substrate. The interposer circuit includes two or more connection layers including a first connection layer and a second connection layer that are disposed at different depths in the dielectric layer. The interposer circuit includes a fuse that is disposed in the first connection layer. The first connection layer is coupled to a first power node and the second connection layer is coupled to a first ground node. The interposer circuit further includes a first capacitor that is in series with the fuse and is connected between the first and the second connection layers. The interposer circuit also includes first, second, and third micro-bumps on top of the dielectric layer such that the fuse is coupled between the first and second micro-bumps and the first capacitor is coupled between the second and third micro-bumps.

CoWos interposer with selectable/programmable capacitance arrays

The present disclosure provides a semiconductor package, including a substrate, an active region in the substrate, an interconnecting layer over the active region, a conductive pad over the interconnecting layer, surrounded by a dielectric layer. At least two discrete regions of the conductive pad are free from coverage of the dielectric layer. A method of manufacturing the semiconductor package is also disclosed.

An embodiment is a circuit. The circuit includes active circuitry, a first capacitor, a first fuse, a second capacitor, and a second fuse. The active circuitry has a first power node and a second power node. The first capacitor is coupled to the first fuse serially to form a first segment. The second capacitor is coupled to the second fuse serially to form a second segment. The first segment and the second segment are coupled together in parallel and between the first power node and the second power node.

Integrated circuit with multi-level arrangement of e-fuse protected decoupling capacitors

A semiconductor structure includes a daisy chain adjacent to an edge of a semiconductor chip. The daisy chain includes a plurality of horizontal metal lines distributed in a plurality of metallization layers, wherein the horizontal metal lines are serially connected; a plurality of connecting pads in a same layer and electrically connecting the horizontal metal lines, wherein the connecting pads are physically separated from each other; and a plurality of vertical metal lines, each connecting one of the connecting pads to one of the horizontal metal lines, wherein one of the plurality of connecting pads is connected to one of the plurality of horizontal metal lines by only one of the plurality of vertical metal lines; and a seal ring adjacent and electrically disconnected from the daisy chain.

Test structure for seal ring quality monitor

Methods for forming stacked capacitors with fuse protection

A method for fabricating an inductor structure having an increased quality factor (Q) is provided. In one embodiment, a substrate is provided and a plurality of metal layers are formed on the substrate. A spirally patterned conductor layer is formed over and in the substrate and in the metal layers to produce a planar spiral inductor. A via hole is formed over and in the substrate and in the metal layers within the spirally patterned conductor layer, the via hole being formed by a through silicon via (TSV) process. Thereafter, the via hole is filled with a core layer, wherein the core layer extends from a bottom surface of the substrate to a top surface of the metal layers.

Method of creating spiral inductor having high Q value

An integrated circuit structure includes a semiconductor chip including a front surface and a back surface; a via extending from the back surface of the semiconductor chip into the semiconductor chip, wherein the via is light transparent; and a photon detector in the semiconductor chip and exposed to the via.

Optical clock signal distribution using through-silicon vias

A thermoelectric structure for cooling an integrated circuit (IC) chip comprises a first type superlattice layer formed on top of the IC chip connected to a first voltage, and a second type superlattice layer formed on the bottom of the IC chip connected to a second voltage, the second voltage being different from the first voltage, wherein an power supply current flows through the first and second type superlattice layer for cooling the IC chip.

Thermoelectric cooler for semiconductor devices with TSV

An integrated circuit chip package and a method of manufacture thereof are provided. In one embodiment, the integrated circuit chip package comprises a semiconductor die having power and ground routings, a plurality of through wafer vias disposed within the semiconductor die, the through wafer vias connected to the power and ground routings, and a substrate attached to the semiconductor die, the substrate having power and ground leads connected to the through wafer vias for transferring power from the substrate to the semiconductor die.

Power delivery package having through wafer vias

A method and system for integrally checking a chip layout dataset and a package substrate layout dataset for errors are disclosed. The package substrate layout dataset is converted from a first format into a second format in which the chip layout dataset is provided. The chip layout dataset of the second format is combined with the package substrate layout dataset of the second format into a combined dataset. The combined dataset is then checked for errors or design rule violations.

Method for integrally checking chip and package substrate layouts for errors

A method is disclosed for completing a flip chip package design by re-using mask designs in a tool library. The method comprises analyzing one or more input/out bump locations of a chip, analyzing one or more solder ball locations of a package hosting the chip with regard to a predetermined printed circuit board, and designing the package hosting the chip by using a tool library containing one or more existing mask designs for re-use, wherein when one or more existing mask designs are used for the package, at least one custom connection layer of the package is redesigned when needed for connecting the chip to the printed circuit board without producing a full set of new masks for the package.

Growing community of inventors

Hsin-Chu, Taiwan

Shih-Cheng Chang