Microjet Technology Company, Ltd.

Taiwan Semiconductor Manufacturing Comp. Ltd.

Realtek Semiconductor Inc.

Industrial Technology Research Institute

Powerchip Semiconductor Corporation

Cashido Corporation

Oki Electric Industry Co., Ltd.

Cyntec Company

Young Lighting Technology Corporation

Shih-Chang Chen

Chi-Feng Huang

Yung-Lung Han

Jia-Yu Liao

Hao-Jan Mou

Wei-Ming Lee

Hung-Hsin Liao

Liang-Gi Yao

Che-Wei Huang

Li-Pang Mo

Shou-Hung Chen

Chien-Hao Chen

Chang-Yen Tsai

Tze-Liang Lee

Chi-Chun Chen

Ying-Lun Chang

Ming-Fang Wang

Jheng-Wei Chen

Mong-Song Liang

Chun-Yi Kuo

Chia-Hao Chang

Ching-Sung Lin

Ta-Wei Hsueh

Chia-Lin Chen

Chao-Chih Chen

Chung-Wei Kao

Chih-Wei Chang

Gerchih Chou

Chun-Chi Yu

Chun-Lung Tseng

Pang-Yen Tsai

Hsuan-Kai Chen

Mo-Chiun Yu

Fu-Chin Tsai

Kuo-Wei Chi

Kuen-Chyr Lee

Tien-Chih Chang

Huan-Just Lin

Chun-Feng Nieh

Chih-Wei Yang

Yee-Chia Yeo

Chenming Hu

Fu-Liang Yang

Chao-Hsiung Wang

Da-Yuan Lee

Chien-Chao Huang

Ju-Wang Hsu

Vincent Chang

Keh-Chiang Ku

Chih-Feng Lin

Chen-Hua Douglas Yu

Jen-Yuan Chang

Wen-Chin Lee

Li-Ting Wang

Chun-Chieh Lin

Chia-Ping Lai

Chih-Wei Hung

Cheng-Yuan Hsu

Chien-Chang Lee

Chih-wei Chang

Tzu-Chung Tsai

Chin-Wen Hsieh

Tuo-Hung Hou

Chun-Hung Liao

Matt Yeh

Shun Wu Lin

Yang Ku

Hsiao-Wen Chung

Chun-chi Yu

Shan-Yu Huang

Ji-Yi Yang

Chao-Cheng Chen

Hun-Jan Tao

Weng Chang

Chia-Jen Chen

Wei-Jung Lin

Shing-Chyang Pan

Shen-Nan Lee

Tzeng-Ke Shiau

Tsung-I Lin

Yuan-Tien Tu

Li-Ping Huang

Chih-Kai Chen

Chieh-Lung Lai

Cheng-Chien Li

Jen-Ji Wang

Rong-Ho Yu

Mong Song Liang

Feng-Ming Ou

Donald Y Chao

Chun-Chung Hsiao

Tsai-Chun Li

Tsung-Hsun Huang

Hsueh-Hung Fu

Chih-Chien Chang

Chih-Chiang Wang

Yi-Ting Lu

Huang-Sheng Lin

Lei-Yi Chen

Peng-Fei Lin

A semiconductor structure includes two circuit regions and two inner seal rings, each of which surrounds one of the circuit regions. Each inner seal ring has a substantially rectangular periphery with four interior corner stress relief (CSR) structures. The semiconductor structure further includes an outer seal ring surrounding the two inner seal rings. The outer seal ring has a substantially rectangular periphery without CSR structures at four interior corners of the outer seal ring. The outer seal ring includes a plurality of first fin structures located between each of the two inner seal rings and a respective short side of the outer seal ring. Each first fin structure is parallel with the respective short side of the outer seal ring. Lengths of the first fin structures gradually decrease along a direction from the inner seal rings to the respective short side of the outer seal ring.

Mandrel fin design for double seal ring

A die includes: a semiconductor substrate having a front side and an opposing backside; a dielectric structure including a substrate oxide layer disposed on the front side of the semiconductor substrate and interlayer dielectric (ILD) layers disposed on the substrate oxide layer; an interconnect structure disposed in the dielectric structure; a through-silicon via (TSV) structure extending in a vertical direction from the backside of the semiconductor substrate through the front side of the semiconductor substrate, such that a first end of the TSV structure is disposed in the interconnect structure; and a TSV barrier structure including a barrier line that contacts the first end of the TSV structure, and a first seal ring disposed in the substrate oxide layer and that surrounds the TSV structure in a lateral direction perpendicular to the vertical direction.

Semiconductor die including through substrate via barrier structure and methods for forming the same

A digital low-dropout regulator (DLDO) and a control method thereof are provided. The DLDO includes a power switch circuit, an error detector and a control circuit, wherein the control circuit is coupled to the power switch circuit and the error detector. The power switch circuit is configured to receive an input voltage to generate an output voltage, wherein a voltage difference between the input voltage and the output voltage is controlled by a switch control code. The error detector is configured to generate an error code according to an error between the output voltage and a target voltage. The control circuit is configured to determine a compensation amount according to the switch control code and the error code, and update the switch control code according to the compensation amount, in order to make the output voltage approach the target voltage.

Digital low-dropout regulator with variable compensation gain and control method thereof

A method for calibrating a data reception window includes: (A) setting a level of a reference voltage by different predetermined values and repeatedly sampling a data signal to obtain multiple first valid data reception windows; (B) establishing a first eye diagram based on the first valid data reception windows; (C) resetting the level of the reference voltage by the predetermined values combined with a first offset and repeatedly sampling the data signal according to the reference voltage to obtain multiple second valid data reception windows and (D) selectively updating the first eye diagram according to the second valid data reception windows. When width of a second valid data reception window is greater than width of a first valid data reception window corresponding to the same predetermined value, the first valid data reception window in the first eye diagram is replaced by the second valid data reception window.

Memory controller and method for calibrating data reception window

A die includes: a semiconductor substrate having a front side and an opposing back side; a dielectric structure including a substrate oxide layer disposed on the front side of the semiconductor substrate and interlayer dielectric (ILD) layers disposed on the substrate oxide layer; an interconnect structure disposed in the dielectric structure; a through-silicon via (TSV) structure extending in a vertical direction from the back side of the semiconductor substrate through the front side of the semiconductor substrate, such that a first end of the TSV structure is disposed in the interconnect structure; and a TSV barrier structure including a barrier line that contacts the first end of the TSV structure, and a first seal ring disposed in the substrate oxide layer and that surrounds the TSV structure in a lateral direction perpendicular to the vertical direction.

The present disclosure describes a semiconductor structure including a TSV in contact with a substrate and a metal ring structure laterally surrounding the TSV. The metal ring structure includes one or more metal rings arranged as a stack and one or more metal vias interposed between two adjacent metal rings of the one or more metal rings. The metal ring structure is electrically coupled to the substrate through one or more conductive structures.

Grounded metal ring structure for through-silicon via

An eye diagram measuring method includes: sampling a compensated input signal according to a reference voltage and a reference clock to obtain a first sampling result; and sampling a to-be-compensated input signal according to a scan voltage and a scan clock to obtain a second sampling result, including: (b1) storing a minimum phase and a voltage level which render the first sampling result identical to the second sampling result; (b2) increasing the voltage level and repeating operation (b1); (b3) decreasing the voltage level and repeating operation (b1); (b4) storing a maximum phase and the voltage level which render the first sampling result identical to the second sampling result; (b5) increasing the voltage level and repeating operation (b4); and (b6) decreasing the voltage level and repeating operation (b4). Voltage levels, maximum phases and minimum phases that are stored are for adjusting the reference voltage and the reference clock.

Receiver of communication system and eye diagram measuring method

A resource allocation method comprises using resources with a used resource quantity of a machine learning system to execute a first experiment which has a first minimum resource demand, receiving an experiment request associated with a target dataset, deciding a second experiment according to the target dataset, deciding a second minimum resource demand of the second experiment, allocating resources with a quantity equal to the second minimum resource demand for an execution of the second experiment when a total resource quantity of the machine learning system meets a sum of the first minimum resource demand and the second minimum resource demand and a difference between the total resource quantity and the used resource quantity meets the second minimum resource demand, determining that the machine learning system has an idle resource, and selectively allocating said the idle resource for at least one of the first experiment and the second experiment.

Machine learning system and resource allocation method thereof

An actuating and sensing module is disclosed and includes a bottom plate, a gas pressure sensor, a thin gas transportation device and a cover plate. The bottom plate includes a pressure relief orifice, a discharging orifice and a communication orifice. The gas pressure sensor is disposed on the bottom plate and seals the communication orifice. The thin gas transportation device is disposed on the bottom plate and seals the pressure relief orifice and the discharging orifice. The cover plate is disposed on the bottom plate and covers the gas pressure sensor and the thin gas-transportation device. The cover plate includes an intake orifice. The thin gas transportation device is driven to inhale gas through the intake orifice, the gas is then discharged through the discharging orifice by the thin gas transportation device, and a pressure change of the gas is sensed by the gas pressure sensor.

Actuating and sensing module

A piezoelectric actuator includes a square suspension plate, an outer frame, a plurality of brackets and a square piezoelectric ceramic plate. The outer frame is arranged around the suspension plate. A second surface of the outer frame and a second surface of the suspension plate are coplanar with each other. Each of the plurality of brackets has two ends, a first end is perpendicular to and connected with the suspension plate, and a second end is perpendicular to and connected with the outer frame for elastically supporting the suspension plate. Each bracket has a length in a range between 1.22 mm and 1.45 mm and a width in a range between 0.2 mm and 0.6 mm. A length of the piezoelectric ceramic plate is not larger than a length of the suspension plate. The piezoelectric ceramic plate is attached on a first surface of the suspension plate.

Piezoelectric actuator

A semiconductor structure is provided. The semiconductor structure includes two circuit regions, two inner seal rings, an outer seal ring, a first redundant region, and an electrical circuit. Each of the inner seal rings surrounding one of the circuit regions. The outer seal ring is disposed around the inner seal rings, and each of the inner seal rings contacts the outer seal ring at different interior corners of the outer seal ring. The first redundant region is located between at least one of the inner seal rings and the outer seal ring. The electrical circuit is formed in the first redundant region and electrically connected to at least one of the circuit regions.

Semiconductor structure and method for forming features in redundant region of double seal ring

The present invention discloses a receive data equalization apparatus. A delay-compensating calculation circuit retrieves training data groups of a training data signal to retrieve total delay amount, generate signed compensation amounts according to a relation among training data contents of training data in each of the training data groups to generate total compensation amount accordingly, and solve equations that correspond total delay amount of the training data groups to the total compensation amount to obtain each of the compensation amounts. A receive data equalization circuit receives the compensation amounts and retrieves a receive data group in a receive data signal, generate signed receive compensation amounts according to a relation among receive data contents of receive data in the receive data group to generate a total receive compensation amount accordingly to perform equalization on a terminal edge of the receive data group according to the total receive compensation amount.

Received data equalization apparatus and method

A gas transportation device is provided and includes an outer housing, a valve body and an actuator. The valve body includes a gas outlet plate, a valve plate and a first plate. The gas outlet plate includes plural outlet apertures, the first plate includes plural first orifices, the valve plate includes plural valve openings, the plural valve openings are misaligned with the plural first orifices and corresponding in position to the plural outlet apertures. The actuator having an actuating component in rectangular shape is stacked and disposed on the valve body. When the actuator is driven, through the structure that the plural first orifices and the plural valve openings are misaligned, the valve body is operated to open a flow path when an airflow is in a forward direction, and the valve body is operated to seal the flow path when the airflow is in a reverse direction.

Gas transportation device

A gas transportation device is provided and includes an outer housing, a valve body and an actuator. The outer housing includes an outlet cover, an outlet end, an accommodation space, an inlet cover, and an inlet end. The valve body is in a circular shape and includes a gas outlet plate, a valve plate and a first plate stacked sequentially and disposed within the accommodation space. The actuator is in a circular shape, stacked and disposed on the valve body, includes a second plate, a frame and an actuating component. When the actuator is driven, through the structure of misalignment of the first orifices and the valve openings, the valve body is operated to open a flow path when an airflow is in a forward direction, and the valve body is operated to seal the flow path when the airflow is in a reverse direction.

A miniature blower includes a soft sheet, a nozzle plate, a chamber frame, an actuator body, an insulation frame, and a conductive frame. The nozzle plate has a suspension portion, and the soft sheet is disposed on the suspension portion. The chamber frame is disposed on the nozzle plate. The actuator body includes a piezoelectric carrier plate, an adjusting resonance plate, and a piezoelectric plate. The actuator body is disposed on the chamber frame. The insulation frame is disposed on the actuator. The center point of a central hole of the soft sheet and the center point of a hollow hole of the suspension portion are located at the same axis.

Miniature blower

Growing community of inventors

Hsinchu, Taiwan

Shih-Chang Chen