Apple Inc.

Other

Tpo Displays Corporation

Shih Chang Chang

John Z Zhong

Young Bae Park

Chin-Wei Lin

Cheng Kai Chen

Chun-Yao Huang

Vasudha Gupta

Tsung-Ting Tsai

Ting-Kuo Chang

Kyung Wook Kim

Steven Porter Hotelling

Jae Won Choi

Byung Duk Yang

Ming Xu

Marduke Yousefpor

Szu-Hsien Lee

Shawn Robert Gettemy

Abbas Jamshidi Roudbari

Cheng-Ho Yu

Shinya Ono

Ming-Chin Hung

Zhibing Ge

Kwang Soon Park

Kyung-Wook Kim

Hopil Bae

Hung Sheng Lin

Hao-Lin Chiu

Mingxia Gu

Lili Huang

Hiroshi Osawa

Yu-Cheng Chen

Paolo Sacchetto

Minhyuk Choi

Wei Hsin Yao

Yu Cheng Chen

Abbas Jamshidi-Roudbari

Paul Stephen Drzaic

Steve Porter Hotelling

Rui Liu

Warren S Rieutort-Louis

Shang-Chih Lin

Rungrot Kitsomboonloha

Chaohao Wang

Shyuan Yang

Wonjae Choi

Yuchi Che

Bhadrinarayana Lalgudi Visweswaran

Cheuk Chi Lo

Fletcher R Rothkopf

Victor H Yin

Jason C Sauers

Graham Butler Myhre

Enkhamgalan Dorjgotov

David W Lum

Jiun-Jye Chang

Kevin J White

Meng-Huan Ho

Ching-Sang Chuang

Jean-Pierre Simon Guillou

Chieh-Wei Chen

Sang Young Youn

Shin-Hung Yeh

Lynn Richard Youngs

Joshua G Wurzel

Zhen Zhang

Yaw-Ming Tsai

Chang-Ho Tseng

Casey J Feinstein

Chia-Yu Chen

Jason N Gomez

Seung Jae Hong

Yun Yu Wang

Dinesh C Mathew

Moon Jung Kim

Jun Qi

Martin Paul Grunthaner

Bryan W Posner

Ahmad Al-Dahle

Benjamin B Lyon

Lei Yuan

Yuan Chen

Hirokazu Yamagata

Prashant Mandlik

Jungmin Lee

Andrew C Lin

Koorosh Aflatooni

Young Cheol Yang

Fenghua Zheng

Yi Tao

Yongman Lee

Lun Tsai

Ivan Knez

Xinyu Zhu

Christopher Edward Glazowski

Chuang Qian

Stephen S Poon

Keitaro Yamashita

Hung-Che Ting

Shatam Agarwal

Donghee Nam

A display may include an array of pixels that receive control signals from a chain of gate drivers. Each gate driver may include a number of semiconducting oxide transistors and capacitors. At least some of the semiconducting oxide transistors in the gate driver have bottom gate terminals configured to receive a separately adjustable bottom gate voltage for adjusting the threshold voltage during power on, normal, and power off operations. If desired, each gate driver may be provided with two or more different bottom gate voltages for individually controlling separate portions of the gate driver.

Display having semiconducting oxide gate driver circuitry with adjustable threshold voltage

An electronic device may have a display such as an organic light-emitting diode display. The organic light-emitting diode (OLED) display may have an array of organic light-emitting diode pixels that each have OLED layers interposed between a cathode and an anode. A first passivation layer, a first planarization layer, and a second passivation layer may be formed over the cathode. The first and second passivation layers may be formed from inorganic material. A second planarization layer may be formed over the second passivation layer between the second passivation layer and a polarizer. The second planarization layer may planarize the polarizer at the edges of the active area of the display where the polarizer would otherwise have a steep taper. Planarizing the polarizer in this way mitigates undesirable secondary reflections off of the polarizer. The first and second planarization layers may be formed from organic material.

Organic light-emitting diode displays with planarization layers

A display may have an array of pixels. Each pixel may have a light-emitting diode such as an organic light-emitting diode. The organic light-emitting diodes may each have an anode that is coupled to a thin-film transistor pixel circuit for controlling the anode. Transparent windows may be formed in the display. The windows may be formed by replacing data storage capacitors and other pixel circuit structures in a subset of the pixels with transparent window structures, by selectively removing portions of light-emitting diode anodes, and by shifting anodes. An array of electrical components such as an array of light sensors may be aligned with the transparent windows and may be used to measure light passing through the transparent windows.

Display with array of light-transmitting windows

A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply. The pixels may include first and second switching transistors. A data storage capacitor may be coupled between a gate and source of the drive transistor in each pixel. Signal lines may be provided in columns of pixels to route signals such as data signals, sensed drive currents from the drive transistors, and predetermined voltages between display driver circuitry and the pixels. The switching transistors, emission transistors, and drive transistors may include semiconducting-oxide transistors and silicon transistors and may be n-channel transistors or p-channel transistors.

Display with light-emitting diodes

An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

Displays with silicon and semiconducting oxide thin-film transistors

An organic light-emitting diode (OLED) display may have an array of organic light-emitting diode pixels that each have OLED layers interposed between a cathode and an anode. Voltage may be applied to the anode of each pixel to control the magnitude of emitted light. The conductivity of the OLED layers may allow leakage current to pass between neighboring anodes in the display. To reduce leakage current and the accompanying cross-talk, the display may include active and/or passive leakage-mitigating structures. The passive leakage-mitigating structures may have an undercut that causes discontinuities in the overlying OLED layers. Active leakage-mitigating structures may include a conductive layer (e.g., a conductive ring) that drains leakage current to ground. Alternatively, the active leakage-mitigating structures may include a gate electrode modulator with a variable voltage that stops the current flow laterally.

Organic light-emitting diode display with passive leakage-reducing structures

An electronic device such as a head-mounted device may have displays. The display may have regions of lower and higher resolution to reduce data bandwidth and power consumption for the display while preserving satisfactory image quality. Data lines may be shared by lower and higher resolution portions of a display or different portions of a display with different resolutions may be supplied with different numbers of data lines. Data line length may be varied in transition regions between lower resolution and higher resolution portions of a display to reduce visible discontinuities between the lower and higher resolution portions. The lower and higher resolution portions of the display may be dynamically adjusted using dynamically adjustable gate driver circuitry and dynamically adjustable data line driver circuitry.

Foveated display

An electronic device may have a display with touch sensors. One or more shielding layers may be interposed between the display and the touch sensors. The shielding layers may include shielding structures such as a conductive mesh structure and/or a transparent conductive film. The shielding structures may be actively driven or passively biased. In the active driving scheme, one or more inverting circuits may receive a noise signal from a cathode layer in the display and/or from the shielding structures, invert the received noise signal, and drive the inverted noise signal back onto the shielding structures to prevent any noise from the display from negatively impacting the performance of the touch sensors. In the passive biasing scheme, the shielding structures may be biased to a power supply voltage.

Shielding for electronic device displays with touch sensors

A light emitter that operates through a display may cause display artifacts, even when the light emitter operates using non-visible wavelengths. To mitigate artifacts caused by a light emitter operating through a display, the display may have a higher density of thin-film transistor sub-pixels than emissive sub-pixels. This allows for a region in the display to include emissive sub-pixels but be free of thin-film transistor sub-pixels. The light emitter may operate through this region in the display. Additionally, to reduce the amount of space occupied in the inactive area of a display by gate driver circuitry, at least a portion of the gate driver circuitry may be positioned in the active area of the display. To accommodate the gate driver circuitry, emissive sub-pixels may be laterally shifted relative to corresponding thin-film transistor sub-pixels.

Display with a transmitter under an active area

A display may include an array of pixels. Each pixel in the array includes an organic light-emitting diode coupled to associated semiconducting oxide transistors. The semiconducting oxide transistors may exhibit different device characteristics. Some of the semiconducting oxide transistors may be formed using a first oxide layer formed from a first semiconducting oxide material using first processing steps, whereas other semiconducting oxide transistors are formed using a second oxide layer formed from a second semiconducting oxide material using second processing steps different than the first processing steps. The display may include three or more different semiconducting oxide layers formed during different processing steps.

Display circuitry with semiconducting oxide transistors

To reduce the amount of space occupied in the inactive area of a display by gate driver circuitry, at least a portion of the gate driver circuitry may be positioned in the active area of the display. To accommodate the gate driver circuitry, emissive sub-pixels may be laterally shifted relative to corresponding thin-film transistor sub-pixels. This allows for the thin-film transistor sub-pixels to be grouped adjacent to the central area of the active area, leaving room along an edge of the active area to accommodate one or more additional display components such as gate driver circuitry or fanout portions of data lines.

Displays with gate driver circuitry in an active area

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Cupertino, CA, United States of America

Shih Chang Chang