Invisage Technologies, Inc.

Nlight Photonics Corporation

Shiguo Zhang

Edward Hartley Sargent

Gerasimos Konstantatos

Larissa Levina

Paul Cyr

Steven Ashworth McDonald

Sandrio Elim

Ling Bao

Steve McDonald

The present invention provides of a three-dimensional bicontinuous heterostructure, a method of producing same, and the application of this structure towards the realization of photodetecting and photovoltaic devices working in the visible and the near-infrared. The three-dimensional bicontinuous heterostructure includes two interpenetrating layers which are spatially continuous, they are include only protrusions or peninsulas, and no islands. The method of producing the three-dimensional biocontinuous heterostructure relies on forming an essentially planar continuous bottom layer of a first material; forming a layer of this first material on top of the bottom layer which is textured to produce protrusions for subsequent interpenetration with a second material, coating this second material onto this structure; and forming a final coating with the second material that ensures that only the second material is contacted by subsequent layer. One of the materials includes visible and/or infrared-absorbing semiconducting quantum dot nanoparticles, and one of materials is a hole conductor and the other is an electron conductor.

Three-dimensional bicontinuous heterostructures, method of making, and their application in quantum dot-polymer nanocomposite photodetectors and photovoltaics

A metallization layer for a semiconductor device includes a first layer made of Pt and having a thickness greater than or equal to 15 &#x212b; and less than or equal to 50 &#x212b;, and a second layer formed on the first layer and made of a plurality of metallic sub-layers such as Ti/Pt/Au. A semiconductor device fabricated from the metallization layer includes a semiconductor substrate having a top layer and mesa structure and corresponding surface for securing an insulating layer and a corresponding exposed surface, and wherein the metallization layer is deposited over the insulating layer and exposed surface. Methods for forming the metallization layer are also disclosed.

Nano thick Pt metallization layer

Provided herein are embodiments of a three-dimensional bicontinuous heterostructure, a method of producing same, and the application of this structure. The three-dimensional bicontinuous heterostructure includes two interpenetrating layers which are spatially continuous, include only protrusions or peninsulas, and have no islands. The method of producing the three-dimensional bicontinuous heterostructure includes forming an essentially planar continuous bottom layer of a first material; forming a layer of this first material on top of the bottom layer that is textured to produce protrusions for subsequent interpenetration with a second material, coating this second material onto this structure, and forming a coating with the second material that ensures that only the second material is contacted by subsequent layer. One of the materials includes visible and/or infrared-absorbing semiconducting quantum dot nanoparticles, and one of materials is a hole conductor and the other is an electron conductor.

The present invention provides of a three-dimensional bicontinuous heterostructure, a method of producing same, and the application of this structure towards the realization of photodetecting and photovoltaic devices working in the visible and the near-infrared. The three-dimensional bicontinuous heterostructure includes two interpenetrating layers which are spatially continuous, they are include only protrusions or peninsulas, and no islands. The method of producing the three-dimensional bicontinuous heterostructure relies on forming an essentially planar continuous bottom layer of a first material; forming a layer of this first material on top of the bottom layer which is textured to produce protrusions for subsequent interpenetration with a second material, coating this second material onto this structure; and forming a final coating with the second material that ensures that only the second material is contacted by subsequent layer. One of the materials includes visible and/or infrared-absorbing semiconducting quantum dot nanoparticles, and one of materials is a hole conductor and the other is an electron conductor.

Three-dimensional bicontinuous heterostructures, a method of making them, and their application in quantum dot-polymer nanocomposite photodetectors and photovoltaics

Growing community of inventors

Camas, WA, United States of America

Shiguo Zhang