Toyota Jidosha Kabushiki Kaisha

Denso Corporation

Shigeyuki Takagi

Katsumi Suzuki

Yuichi Takeuchi

Sachiko Aoi

Masaki Shimomura

In a manufacturing method of a silicon carbide semiconductor device, a semiconductor substrate made of silicon carbide and on which a base layer is formed is prepared, a trench is provided in the base layer, a silicon carbide layer is epitaxially formed on a surface of the base layer while filling the trench with the silicon carbide layer, the sacrificial layer is planarized by reflow after forming the sacrificial layer, and the silicon carbide layer is etched back together with the planarized sacrificial layer by dry etching under an etching condition in which an etching selectivity of the silicon carbide layer to the sacrificial layer is 1.

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Kariya, Japan

Shigeyuki Takagi