Kabushiki Kaisha Toshiba

Shigeyuki Takagi

Hidehiko Yabuhara

Yasutomo Shiomi

Akira Maekawa

Hiroshi Hasegawa

Tsutomu Kakuno

Shigeru Kinoshita

Yutaka Uchida

Miyuki Kusaba

Haruo Okano

Toshitake Yaegashi

Hiroshi Nishimura

Makoto Mizukami

Osamu Yamazaki

Hisataka Hayashi

Takayuki Sakai

Hiroshi Watanabe

Makoto Saito

Masashi Yamage

Takashi Magara

Seiji Onoue

Naoki Tajima

Isao Muraoka

Ichiro Tohno

Kaoru Taki

Noboru Okamoto

A breath analyzer includes a light source, a gas cell, a detection unit and a data processing unit. The light source emits infrared light of a wavelength band including an absorption line for acetone. A breath containing sample gas is introduced to the gas cell. The infrared light is incident on the gas cell. The detection unit receives transmitted light emerging from the gas cell, and outputs a sample signal value corresponding to an acetone discharge amount. The data processing unit determines an approximation formula of dependence of fat oxidation rate on acetone discharge amount in advance, and calculates a fat oxidation rate for individual sample signal values using the approximation formula. When the acetone discharge amount (microliter/min) is x, the fat oxidation rate (milligram/min) y is approximated by a following formula: y=Ax+B (where A and B are constants).

Breath analyzer

A gas measuring apparatus includes a cell portion, a light source portion, a detection portion, and a control portion. The cell portion includes a space into which a sample gas containing breath containing a first isotope of carbon dioxide and a second isotope of carbon dioxide is introduced. The light source portion changes a wavelength of the light in a band of 4.345 &#x3bc;m or more and 4.384 &#x3bc;m or less. The detection portion performs an operation including first detection of an intensity of the light passing through the space and second detection of an intensity of the light passing through the space into which the sample gas is not introduced. The control portion calculates a ratio of an amount of the second isotope to an amount of the first isotope based on a result of the first detection and a result of the second detection.

Gas measuring apparatus

A semiconductor laser includes: a stacked body having an active layer including a quantum well layer, the active layer having a cascade structure including a first region capable of emitting infrared laser light with a wavelength of not less than 12 &#x3bc;m and not more than 18 &#x3bc;m by an intersubband optical transition of the quantum well layer and a second region capable of relaxing energy of a carrier alternately stacked, the stacked body having a ridge waveguide and being capable of emitting the infrared laser light; and a dielectric layer provided so as to sandwich both sides of at least part of side surfaces of the stacked body, a wavelength at which a transmittance of the dielectric layer decreases to 50% being 16 &#x3bc;m or more, the dielectric layer having a refractive index lower than refractive indices of all layers constituting the active layer.

Semiconductor laser

According to an embodiment, a semiconductor light emitting device is configured to emit light by energy relaxation of an electron between subbands of a plurality of quantum wells. The device includes an active layer and at least a pair of cladding layers. The active layer is provided in a stripe shape extending in a direction parallel to an emission direction of the light, and includes the plurality of quantum wells; and the active layer emits the light with a wavelength of 10 &#x3bc;m or more. Each of the cladding layers is provided both on and under the active layer respectively and have a lower refractive index than the active layer. At least one portion of the cladding layers contains a material having a different lattice constant from the active layer and has a lower optical absorption at a wavelength of the light than the other portion.

Semiconductor light emitting device and method for manufacturing same

A semiconductor memory includes: a first memory cell transistor including: a first floating gate electrode provided on and insulated from the substrate; and a first control gate electrode provided on and insulated from the first floating gate electrode; and a second memory cell transistor including: a second floating gate electrode provided on and insulated from the substrate, an upper surface being larger than a lower surface, and the upper surface being lower than an upper surface of the first floating gate electrode; and a second control gate electrode provided on and insulated from the second floating gate electrode.

Semiconductor memory and method for manufacturing a semiconductor memory

A semiconductor device designing method includes calculating capacitance. The semiconductor device has a semiconductor substrate, an insulator formed on the semiconductor substrate, and an electrode formed on the insulator. The capacitance is calculated under an approximation assuming a portion of the semiconductor substrate, the insulator and a portion of the electrode to be one of a conductor and a dielectric depending on electric characteristics thereof, respectively.

Method of designing and manufacturing semiconductor device

A dry processing apparatus includes a lower electrode for holding a substrate to be processed in a chamber, a shower head, provided to face a surface of the lower electrode, on which the substrate to be processed is placed, for supplying a process gas to the substrate to be processed, placed on the lower electrode, and a pumping channel formed to surround an outer circumference of the lower electrode, wherein a pumping gap portion for communicating a processing space formed between the lower electrode and the shower head, and the pumping channel with each other, is made such that a width of the gap portion differs between an exhaust pump side where the pumping channel is connected to an exhaust pump, and an opposite side thereto.

Dry processing apparatus and dry processing method

A plasma processing apparatus according to the present invention includes a microwave guide for introducing a microwave, an air-tight chamber for internally setting an object to be processed, for generating a plasma by introducing the microwave introduced by the microwave guide and by supplying a reaction gas, and for processing the object by an active species generated by the plasma, a dielectric window provided between the microwave guide and the air-tight chamber, for enclosing the air-tight chamber, a top plate provided with a microwave guide port arranged with a gap maintained from the dielectric window, and cooling means provided for the top plate, for cooling heat caused by generation of the plasma, e.g., a cooling means for causing a cooling gas to flow in the gap between the dielectric window and the top plate.

Plasma processing apparatus and a plasma processing method

Etching selectivity is improved in a semiconductor process using a fluorocarbon gas. An energy incident to a substrate is controlled to have a value to cause transition from etching to deposition on a silicon nitride film, ions having (CF.sub.2).sub.n.sup.+ as a major component are guided onto the substrate to perform selective etching of a silicon oxide film against the silicon nitride film.

Surface treatment method and surface treatment apparatus

Growing community of inventors

Kanagawa-ken, Japan

Shigeyuki Takagi