Sony Corporation

Shigeyuki Ochi

Seisuke Yamanaka

Hiroshi Yamazaki

Yasuo Kanou

Yoshiaki Hagiawara

A solid state imaging device comprising a charged coupled device CCD for use in a camera which has a shutter and wherein the output of the charged coupled device is supplied to a video processing unit which drives a magnetic recorder for recording images on a magnetic medium and wherein first and second field images are simultaneously picked up by the photosensitive regions of the solid state image sensor when the shutter is opened and the first and second field signal charges are read out sequentially from the charge couple device when the shutter is closed. The invention also provides for sweeping unrequired charges from prior images from the charge coupled device so as to prevent blooming. The exposure on the charge coupled device automatically controls the time or aperture of the exposure system based on detected signals. The shutter is closed for two field periods while the first and second fields are read out so as to prevent smearing and mixing.

Solid state image pickup device

A solid state color camera having a charge coupled device (CCD) on which the image of an object to be picked up is projected. In the color camera, the frequency of a clock signal, which is supplied to a horizontal shift register of the CCD chip for reading out a stored image signal therein, is so selected that the carrier frequency of a chroma signal, which is read out at the output terminal of the horizontal shift register, coincides with the color sub-carrier frequency (3.58 MH.sub.z) of a standard color television signal (for example, NTSC color television signal), and also the order for reading out image informations stored in image sensing elements of the CCD chip arranged in both the horizontal and vertical directions is so selected so that an output signal can be derived from the horizontal shift register with the same phase as that of the color sub-carrier of the standard color television signal.

Solid state color camera

In an interline type charge coupled device imaging device, a single vertical shift resister transfers sampled image carriers generated at image sensing cells vertically aligned on both sides thereof. The transfer electrode of the vertical shift register preferably extends to a front edge of a narrow portion of the shift register surrounded by channel stopper regions. Further, the output signal from the imaging device is processed by mixing two successive line signals, so that the sensing cells are aligned in a zig-zag pattern on both sides of each vertical shift register.

Solid state image sensor

In a solid state image sensor of the type which employs an inter-line transfer charge-coupled imaging device, the electrodes of the vertical shift registers are enlarged to extend to places which lie between image pick-up portions aligned in the vertical direction of the device. Each of the image pick-up portions comprises an image sensing area and a transfer gate. Preferably, every other image pick-up portion of a conventional CCD imaging device is removed to provide spacing between the image pick-up portions relative to the vertical direction.

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Machida, Japan

Shigeyuki Ochi