Canon Kabushiki Kaisha

Cannon Kabushiki Kaisha

Shigeyuki Matsumoto

Osamu Ikeda

Shunsuke Inoue

Asao Saito

Kei Fujita

Yasuhiro Naruse

Mamoru Miyawaki

Hiroshi Yuzurihara

Kazuaki Ohmi

Masami Ikeda

Hiroshi Sugitani

Kenji Makino

Yoshio Nakamura

Yasuaki Fukuda

Seiichi Tamura

Tetsuo Asaba

Kunio Watanabe

Shigetoshi Sugawa

Masahiko Kubota

Takeshi Ichikawa

Teruo Ozaki

Nobuyoshi Tanaka

Takashi Miyazaki

Yukuo Nishimura

Shunichi Uzawa

Akira Ishizaki

Yasuhiro Sekine

Jun Iba

Masaaki Izumida

Toshitami Hara

Yukihiko Sakashita

Masaru Sakamoto

Tokuya Ohta

Yasushi Takatori

Masatsune Kobayashi

Shigeki Kondo

Yukihiro Hayakawa

Hideshi Kuwabara

Yohji Matsufuji

Fumio Murooka

Masakazu Ozawa

Masaaki Okada

Katsumi Komiyama

Hitoshi Shindo

Yutaka Akino

Toshiji Suzuki

Toshihiko Ichise

Haruo Uehara

Seiji Kamei

Genzo Monma

Yukio Kasugayama

Jun Nakayama

Yoshihumi Hattori

Yashiro Naruse

Minoru Miyazaki

Akio Iijima

The motion picture quality of liquid crystal display apparatus is improved by placing a non-display period depending on the responsiveness of the liquid crystal and a backlight source. For this purpose, a sub-period is set, within one frame period, for displaying a luminance corresponding to prescribed picture data so as to provide a time integral of luminance corresponding to a maximum luminance not exceeding a certain threshold, and another sub-period for displaying a lower luminance is placed in the same one frame period.

Liquid crystal display apparatus

A printing head is intended to achieve high reliability and a production method of the printing head is intended to achieve high yield at low cost. A liquid ejecting printing head employs a base body, in which an electrothermal transducer element, a driving functional element for driving the electrothermal transducer element, a wiring electrode connecting between the electrothermal transducer element and the driving functional element, and an insulation layer provided on the wiring electrode are formed on a substrate. The electrothermal transducer element has a heat generating resistor formed of a material selected from the group consisting TaN, HfB , Poly-Si, Ta&mdash;Al, Ta&mdash;Ir, Au and Ag. A protective layer above the heat generating body is formed of an insulative compound deposited to be low density to high density in order. The protective layer is formed by depositing the insulative material in the electrothermal transducer element or the wiring electrode with elevating the temperature of the base body from low temperature to high temperature.

Liquid ejecting printing head, production method thereof and production method for base body employed for liquid ejecting printing head

A heat generating resistor comprised of a film composed of a TaN -containing tantalum nitride material which is hardly deteriorated and is hardly varied in terms of the resistance value even upon continuous application of a relatively large quantity of an electric power thereto over a long period of time. A substrate for a liquid jet head comprising a support member and an electrothermal converting body disposed above said support member, said electrothermal converting body including a heat generating resistor layer capable of generating a thermal energy and electrodes being electrically connected to said heat generating resistor layer, said electrodes being capable of supplying an electric signal for demanding to generate said thermal energy to said heat generating resistor layer, characterized in that said heat generating resistor layer comprises a film composed of a TaN -containing tantalum nitride material. A liquid jet head provided with said substrate for a liquid jet head. A liquid jet apparatus provided with said liquid jet head.

HEAT GENERATING RESISTOR CONTAINING TAN0.8, SUBSTRATE PROVIDED WITH SAID HEAT GENERATING RESISTOR FOR LIQUID JET HEAD, LIQUID JET HEAD PROVIDED WITH SAID SUBSTRATE, AND LIQUID JET APPARATUS PROVIDED WITH SAID LIQUID JET HEAD

A process for forming a metal film comprises the steps of arranging a substrate in a space for formation of the film, introducing an alkylaluminum hydride gas and hydrogen gas into the space and heating directly the substrate to form a metal film comprising aluminum as main component on the surface of the substrate.

Gas supplying apparatus

The semiconductor circuit device is provided with a first wiring layer connected to a semiconductor substrate through a contact hole in an insulation film formed on a main surface of the semiconductor substrate, and a second wiring layer connected with the first wiring layer through a through-hole in an interlayer insulation film formed on the first wiring layer, wherein the first wiring is substantially flat on the contact hole and the area of the through-hole is smaller than that of the contact hole.

Method of producing a wiring for a semiconductor circuit

A recording head has a liquid emission section with an orifice for emitting ink, an electro-thermal transducer producing thermal energy for ink emission and a functional element electrically connected to the electro-thermal transducer. The functional element is connected to the transducer by a layer formed of the same material and at the same time as a layer of a heat generating resistive layer constituting the electro-thermal transducer, which enables the formation of a large number of functional elements on a single substrate while maintaining the elements in electrical isolation without increasing manufacturing cost.

Method of producing recording head

A deposited film formation method comprises the steps of:

Method for preparing a semiconductor device

An ink jet head provided with discharging orifices for discharging ink, which includes a substrate having a supporting member having at least a surface having substantially insulating properties and a plurality of diodes provided on the supporting member, the diodes each comprising a polycrystalline silicon layer and at least one metal silicide layer, wherein the polycrystalline silicon layer has a p-n junction surface therein.

Ink jet recording head having an oriented p-n junction diode, and

An X-ray mask structure comprises an X-ray transmissive film, an X-ray absorptive member held on the X-ray transmissive film and supporting frame for supporting the X-ray transmissive film. The X-ray absorptive member is constituted of crystalline grains having a grain boundary size of 1 .mu.m or larger, or has a density of 90% or more relative to the density of the bulk material.

X-ray mask structure, preparation thereof and X-ray exposure method

A semiconductor device, wherein an electrode wiring, which is in contact with semiconductor layers of mutually different conductive types and serves to connect at least he layers of mutually different conductive types, comprises a first portion principally composed of a component same as the principal component of the semiconductor layers, and a second portion consisting of a metal.

Semiconductor device and method for producing the same

A recording head comprises electrothermal transducers for jetting ink and functional devices for driving these electrothermal transducers, both of which are arranged on a single substrate plate. The functional devices comprise a pair of major electrode regions such as drain and source regions arranged on the substrate plate, a region comprising control electrode region and surrounding one of electrode regions used to be grounded, an insulating layer arranged on the control electrode region and a control electrode arranged on the insulating layer. The control layer alters the semiconductor types of a boundary surface of the control electrode region by applying a control voltage through the insulating layer and as a result a current flow between major electrode regions, source and drain, is controlled.

Ink jet recording system having improved functional devices for driving

A semiconductor device with a high-density wiring structure, and a producing method for such device are provided. The semiconductor device has a substrate such as silicon, an insulation layer laminated on the substrate and having a groove or a hole, and a wiring of a conductive material formed in the groove or hole in the insulation layer. The wiring is formed by depositing a conductive material such as aluminum or an aluminum alloy in the groove or hole of the insulation layer by a CVD method utilizing alkylaluminum hydride gas and hydrogen. The groove or hole can be formed by an ordinary patterning method combined with etching.

Method of making a planar wiring in an insulated groove using

A process for preparing an X-ray mask structure comprises an X-ray transmissive film, an X-ray absorptive member held on the X-ray transmissive film and supporting frame for supporting the X-ray transmissive film. The X-ray absorptive member is constituted of crystalline grains having a grain boundary size of 1 .mu.m or larger, or has a density of 90% or more relative to the density of the bulk material.

Process for preparing an X-ray mask structure

A semiconductor device including a field effect transistor has source and drain areas formed on the main surface of a semiconductor substrate and a gate electrode formed on the main surface across a gate insulation film. The gate electrode has a first electrode portion with an electron donating surface and a second electrode portion consisting of metal formed on the first electrode portion.

Method for making semiconductor device with metal deposited on electron

A photoelectric converting apparatus has a semiconductor transistor for accumulating carriers generated by a light excitation into a control electrode region. A portion in the control electrode region other than at least a portion which contributes to an operation of the transistor has impurity concentrations higher than an impurity concentration of the portion which contributes to the transistor operation.

Photoelectric converting apparatus

Growing community of inventors

Atsugi, Japan

Shigeyuki Matsumoto