Mitsubishi Electric Corporation

Shigeyoshi Usami

Eiji Yagyu

Masahiro Yoshida

Tatsuro Watahiki

Yuki Takiguchi

Hisashi Saito

Marika Nakamura

A first nitride semiconductor layer and a second nitride semiconductor layer are laminated in a first direction. The first and second nitride semiconductor layers form a heterojunction, and a two-dimensional carrier gas is induced in the first nitride semiconductor layer. A drain electrode is opposite to a source electrode via gate electrode in a third direction. The source electrode and the drain electrode conduct with the first nitride semiconductor layer. The first and second nitride semiconductor layers form a Schottky junction with the gate electrode. A first layer is located between the gate electrode and the drain electrode in the third direction and is in contact with the gate electrode, and is in contact with the second nitride semiconductor layer in a second direction. The first layer suppresses induction of the two-dimensional carrier gas in the first nitride semiconductor layer opposite to the first layer in the first direction.

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Tokyo, Japan

Shigeyoshi Usami