Fujitsu Corporation

Shigeyoshi Umemiya

Kazuaki Kurihara

Masao Kondo

Masaharu Hida

Hiroyuki Fukuda

Hiroshi Endo

Tsuyoshi Aoki

Kenji Maruyama

Masatoshi Ogawa

Masaki Kurasawa

Takahiro Arioka

Mitsuo Ozaki

Shino Tokuyo

Shigeharu Suzuki

Shino Sakai

Keita Akeno

Hiroaki Yoshida

Yasuo Yamagishi

Masahiro Mori

Osamu Matsuura

Hironobu Kitajima

Takefumi Inagaki

Hideyuki Noshiro

Kazuaki Takai

Kazuaki Karasawa

Yoshimasa Horii

Tsuyoshi Mita

Masaaki Nakabayashi

Takuro Ikeda

Hideki Yamawaki

Yoshio Kikuchi

Hiroo Ueda

Michinori Kutami

Masashi Yamaumi

Kou Nakamura

Ayasa So

An estimation method executed by a computer, the estimation method includes estimating a fouling degree of a target ship based on an accumulation period since a most recent maintenance on the target ship; selecting, as training data, one piece of data that has a fouling degree that resembles the estimated fouling degree, from among a plurality of pieces of data, when generating a machine learning model for estimating an amount of fuel consumption due to navigation; and generating the machine learning model based on the selected training data.

Estimation method, training method, storage medium, and estimation device

An estimating method, includes: generating, by a computer, a plurality of frequency spectra based on data measured during movement on a structure at a plurality of speeds; identifying a range of a natural frequency of the structure based on the plurality of frequency spectra; and calculating the natural frequency based on one or more dominant frequencies included in the range among dominant frequencies of the plurality of frequency spectra and speeds when the one or more dominant frequencies included in the range are measured.

Estimating method, information processing device, and non-transitory computer-readable recording medium storing estimating program

A data center includes: a structure provided with an intake port at one side thereof and an exhaust port at the other side thereof; a rack disposed in the structure; an air blower configured to introduce outside air into the structure through the intake port to circulate the outside air from one side to the other side of the rack; a circulation passage configured to make a first space between the one side of the rack and the intake port and a second space between the other side of the rack and the exhaust port communicate with each other; a circulation amount control equipment disposed within the circulation passage; and an air circulation amount control device configured to control the circulation amount control equipment and an operation state of the electronic equipment such that the amount of the air which circulates the circulation passage is adjusted.

Data center

A modular data center includes: a rack which houses an electronic device; a blower device capable of switching a flowing direction of air and configured to feed the air into the rack; a space housing a moisture absorbent; an in-rack temperature detector which detects a temperature inside the rack; a dew-point temperature detector which detects a dew-point temperature of outside air; and a controller. The controller receives signals inputted from the in-rack temperature detector and the dew-point temperature detector, and controls shutters and the blower device.

Modular data center

An electronic device rack includes a plurality of panels surrounding a first space. Moreover, the electronic device rack includes: an electronic-device housing unit disposed in the first space and configured to house electronic devices; a heat exchanger disposed in the first space at a position away from the electronic-device housing unit; a second space provided between the electronic-device housing unit and the heat exchanger and isolated from the rest of the first space; and an air blower configured to circulate air inside the first space through the electronic-device housing unit, the second space, and the heat exchanger in the described order.

Electronic device rack and information processing apparatus

A module-type data center includes: a casing including a first intake opening, a second intake opening, and an exhaust opening; an air conditioner provided in the casing and configured to generate a first airflow by taking in outside air through the first intake opening and bringing the outside air into direct contact with a refrigerant; a fan unit provided in the casing and configured to generate a second airflow by taking in the outside air through the second intake opening; and an electronic device provided in the casing and configured to be air-cooled by a mixed airflow of the first airflow and the second airflow and release an exhaust airflow after the air-cooling to the exhaust opening. The first intake opening and the second intake opening are provided on different surfaces of the casing.

Module-type data center and method of controlling the same

An acceleration sensor includes a piezoelectric layer formed on a substrate, and sensing electrodes formed in the piezoelectric layer. In the acceleration sensor, the piezoelectric layer interposing between the sensing electrodes is polarized in a film thickness direction of the piezoelectric layer.

Acceleration sensor having polarized piezoelectric layer interposed between sensing electrodes

A piezoelectric generating apparatus includes a plurality of piezoelectric bodies arranged at intervals via a gap. Each of the plurality of piezoelectric bodies includes a fixed end and a free end. A first surface electrode is formed on one side of each of the plurality of piezoelectric bodies, and a second surface electrode is formed on an opposite side of each of the plurality of piezoelectric bodies. A weight spans the plurality of piezoelectric bodies and attached to the free ends of the plurality of piezoelectric bodies. The plurality of piezoelectric bodies are curved upon application of acceleration to the weight from the outside in a lateral direction.

Piezoelectric generating apparatus

A coating film is formed on the whole surface area of a body part. Formation of the coating film may be done by immersing the body part in a solution of parfluoropolyether. Then, the parfluoropolyether constituting the coating film is joined with the side surfaces of the body part by irradiating Xenon excimer laser in a nitrogen atmosphere onto the side faces of the body part, or to the surface exposing an electrode layer. As a result, the protective film is formed only on the side surfaces of the body part. Thus, the protective film is formed as a monomolecular film. Total body part is then cleaned by 2,3-dihydrodecafluoropentane to remove non-reacted coating film, thereby completing a multi-layer piezoelectric element.

Piezoelectric element and method for manufacturing the same

A thin-film piezoelectric device is disclosed that includes a substrate, a piezoelectric pattern disposed on the substrate, the piezoelectric pattern including plural spaced-apart piezoelectric regions, and a pair of electrodes that apply an electric field to the piezoelectric pattern.

Thin-film piezoelectric device and method of manufacturing the same

A bottom electrode () made of Ir, an initial layer (), a core layer () and a termination layer () of a PZT film, and a top electrode () made of IrO, are formed on an underlining film (). The initial layer () is formed in a low oxygen partial pressure with a thickness of 5 nm. The thickness of the core layer () is set to 120 nm. The termination layer () is set to be an excess Zr layer. In other words, as for the composition of the termination layer (), 'Zr/(Zr+Ti)' is set to be larger than 0.5, and in the termination layer () Zr is contained more excessively than the morphotropic phase boundary composition.

Semiconductor device reducing leakage across a ferroelectric layer

A micro displacement mechanism minutely displaces an object to be driven. The micro displacement mechanism includes a stationary part and an actuator fixed to the stationary part so as to rotatably support the object to be driven. The actuator includes a pair of piezoelectric actuators attached to opposite side surfaces of said object to be driven, respectively. The pair of piezoelectric actuators are arranged at point symmetric positions with respect to a center of gravity of the object to be driven.

Micro displacement mechanism and magnetic disk apparatus

A moving mechanism using a piezoelectric actuator is attached by an adhesive with adhesive parts of a constant area between a piezoelectric element and a slider and between the piezoelectric element and a suspension. A movable part, serving as the slider, is moved by the piezoelectric actuator. A support part, serving as a gimbal part of a suspension, supports the piezoelectric actuator. At least one of the movable part and the support part is fixed to the piezoelectric element. At least one of the piezoelectric element, the movable part and the support part has a bonding surface that is defined by a level difference.

Moving mechanism using a piezoelectric actuator and a magnetic disk apparatus having such a moving mechanism

A method is disclosed for fabricating a semiconductor device having a memory employing a ferroelectric capacitor in which the orientation of the ferroelectric film is controlled. The method for fabricating the semiconductor device includes a first film deposition process for forming a first ferroelectric layer, and a second film deposition process for forming a second ferroelectric layer on the first ferroelectric layer. The film deposition temperature of the first film deposition process is set to at least 600&#xb0; C.

Method for fabricating semiconductor device

A device having a capacitor element includes: an underlying body having a non-orientated first surface; a lower electrode formed on the first surface of the underlying body, the lower electrode containing conductive metal oxide and not containing noble metal, such as LaNiO, the conductive metal oxide having a (0 0 1) orientated ABOtype pervskite structure; a ferroelectric layer formed on the lower electrode, having a rhombohedral ABOtype pervskite structure, the ferroelectric layer being preferentially (0 0 1) orientated in conformity with the orientation of the lower electrode, and an upper electrode formed on the ferroelectric layer.

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Kawasaki, Japan

Shigeyoshi Umemiya