Sharp Kabushiki Kaisha Corporation

Semiconductor Energy Laboratory Co., Ltd.

Shigeyasu Mori

Seiichi Uchida

Yasuyuki Ogawa

Yutaka Takamaru

Takuya Matsuo

Makoto Nakazawa

Seiji Kaneko

Tadayoshi Miyamoto

Kazuhide Tomiyasu

Kazuatsu Ito

Kohhei Tanaka

Kaoru Yamamoto

Kenichi Okazaki

Kiyoshi Minoura

Fumiki Nakano

Hiroshi Matsukizono

Takatoshi Orui

Mitsunobu Miyamoto

Junichi Koezuka

Yosuke Kanzaki

Yukinori Shima

Shunpei Yamazaki

Hiroyuki Miyake

Masayuki Sakakura

Masahiro Takahashi

Toshinari Sasaki

Hiroyuki Ogawa

Yoshifumi Tanada

Yasuharu Hosaka

Yoshitaka Yamamoto

Yohsuke Kanzaki

Yasuhiro Sugita

Takao Saitoh

Kazutoshi Kida

Masahiro Katayama

Shinji Yamagishi

Tsutomu Murakawa

Tomoko Teranishi

Yuhji Yashiro

Manabu Sato

Masatoshi Yokoyama

Akihiro Oda

Noriaki Yamaguchi

Keisuke Ide

Hao Li

Atsushi Tomyo

In an electrode substrate (), a contact hole () provided in a first planarizing resin layer () is filled with a second planarizing resin layer (). A TFT () is electrically connected to an electrode () via the contact hole (). On the electrode (), a water repellent layer () is provided via a dielectric layer () including the second planarizing resin layer () and an ion barrier layer ().

Electrode substrate, method for producing same, and electronic device

A scanning antenna includes a TFT substrate including a first dielectric substrate, a plurality of TFTs, a plurality of gate bus lines, a plurality of source bus lines, and a plurality of patch electrodes, a slot substrate including a second dielectric substrate and a slot electrode () formed on the first main surface of the second dielectric substrate, a liquid crystal layer provided between the TFT substrate and the slot substrate, and a reflective conductive plate provided opposing a second main surface opposite to the first main surface of the second dielectric substrate via a dielectric layer, and the slot electrode includes a plurality of slots arranged in accordance with the plurality of patch electrodes, and a groove configured to divide the slot electrode into two or more sections, and the TFT substrate includes an opposing metal part arranged opposing the groove, and when viewed from a normal line direction of the first dielectric substrate, the groove is covered with the opposing metal part in the width direction thereof.

Scanning antenna and method for manufacturing same

A scanning antenna including: a TFT substrate including a first dielectric substrate, a TFT, a gate bus line, a source bus line, and a patch electrode; a slot substrate including a second dielectric substrate and a slot electrode formed on a first main surface of the second dielectric substrate; a liquid crystal layer provided between the TFT substrate and the slot substrate; and a reflective conductive plate. The scanning antenna has a tiling structure in which a plurality of scanning antenna portions are bonded together, and each of the plurality of scanning antenna portions includes a TFT substrate portion and a slot substrate portion. The plurality of scanning portions include: a scanning antenna portion including, on a side to be bonded with an adjacent scanning antenna portion, a side which the TFT substrate portion protrudes beyond the slot substrate portion, and a scanning antenna portion including, on a side to be bonded with an adjacent scanning antenna portion, a side in which the slot substrate portion protrudes beyond the TFT substrate portion.

A scanning antenna is a scanning antenna in which antenna units U are arranged, and includes a TFT substrate including a first dielectric substrate, TFTs, a plurality of gate bus lines, source bus lines, and patch electrodes; a slot substrate including a second dielectric substrate, and a slot electrode formed on a first main surface of the second dielectric substrate; a liquid crystal layer LC provided between the TFT substrate and the slot substrate; and a reflective conductive plate provided opposing a second main surface of the second dielectric substrate opposite to the first main surface via a dielectric layer. The slot electrode includes slots arranged in correspondence with the plurality of patch electrodes, and each of the patch electrodes is connected to a drain of a corresponding TFT and is supplied with a data signal from a corresponding source bus line while selected by a scanning signal supplied from the gate bus line of the corresponding TFT. The frequency at which the polarity of the voltage applied to each of the plurality of patch electrodes is inverted is greater than or equal to 300 Hz.

Scanning antenna and method for driving same

An aim of the present invention is to make it possible to achieve stable operation of thin film transistors in an imaging panel of an X-ray imaging system that uses an indirect conversion scheme. An imaging panel includes a substrate, thin film transistor, photoelectric conversion element, and bias wiring line. The thin film transistor is formed on the substrate. The photoelectric conversion element is connected to the thin film transistor and irradiated by scintillation light. The bias wiring line is connected to the photoelectric conversion element and applies a reverse bias voltage to the photoelectric conversion element. The thin film transistor includes a semiconductor active layer and a gate electrode. The gate electrode is formed between the substrate and semiconductor active layer. The bias wiring line includes a portion that overlaps the gate electrode and semiconductor active layer as seen from the radiation direction of the scintillation light.

Imaging panel and X-ray imaging system provided with said imaging panel

Provided is a technique that reduces patterning defects of data lines in an imaging panel and drain electrodes in thin film transistors without lowering the aperture ratio of the imaging panel. The imaging panel captures scintillation light, which are X-rays that have passed through a specimen and been converted by a scintillator. The imaging panel includes a plurality of gate lines and a plurality of data lines. The imaging panel includes, in each of the pixels, a conversion element that converts scintillation light to electric charge, and a thin film transistor connected to the gate line, data line, and conversion element. A drain electrode of the thin film transistor is formed such that edges of the drain electrode near the data line are more inside the pixel than edges of the conversion element near the data line.

Imaging panel and x-ray imaging device provided therewith

The present invention aims at inhibiting the occurrence of thinning or disconnecting of the bias wiring line in an imaging panel and X-ray imaging device, thereby inhibiting signal delays, signal transmission defects, and the like. A second contact hole electrically connecting an electrode of a photodiode to a bias wiring line penetrates a second interlayer insulating film and photosensitive resin layer. In the second contact hole, an area of a region where the photosensitive resin layer opens is smaller than an area of a region where the second interlayer insulating film opens.

Imaging panel and X-ray imaging device

A second insulating film is disposed so as to cover a conversion element that includes a first insulating film, photodiode, and electrode. The second insulating film is made of a SiNOmaterial, where x is greater than 0 and y is greater than or equal to 0. This makes it possible to provide a TFT and photodiode with excellent anti-moisture characteristics.

An aim of the present invention is to improve the conversion efficiency of scintillation light into electric charge by a photoelectric conversion element in an imaging panel of an X-ray imaging system using an indirection conversion scheme. An imaging panel generates images based on scintillation light acquired from X-rays that have passed through a specimen. The imaging panel includes a substrate, thin film transistor, photoelectric conversion element, and reflective layer. The thin film transistor is formed on the substrate. The photoelectric conversion element is connected to the thin film transistor and converts incident scintillation light into electric charge. The entirety of a region of a light-receiving surface of the photoelectric conversion element where the scintillation light is incident overlaps the reflective layer as seen from the incident direction of the scintillation light. The reflective layer may be the drain electrode. Alternatively, the reflective layer may be a reflective electrode that is formed in the same layer as a gate electrode.

An X-ray image pickup system () includes an X-ray source (), an image pickup panel (), a scintillator (), and an X-ray control unit (E). The image pickup panel includes a photoelectric conversion element (), a capacitor (), a thin film transistor (), and TFT control units (A,B,F). To the photoelectric conversion element (), scintillation light is projected. The capacitor () is connected to the photoelectric conversion element (), and accumulates charges. The thin film transistor () is connected to the capacitor (). The TFT control units (A,B,F) control an operation of the thin film transistor (). The thin film transistor () includes a semiconductor active layer () made of an oxide semiconductor. The X-ray control unit (E) intermittently projects X-ray to the X-ray source (). The TFT control units (A,B,F) cause the thin film transistor () to operate when the X-ray is not projected, so as to read out the charges accumulated in the capacitor ().

X-ray image pickup system

An aim of the present invention is to provide a technology that increases the aperture ratio of an imaging panel. The imaging panel captures scintillation light, which are X-rays that have passed through a specimen and been converted by a scintillator. The imaging panel includes a plurality of gate lines and a plurality of data lines. The imaging panel includes, in each of the pixels, a conversion element that converts scintillation light to electric charge, a thin film transistor connected to the gate line, data line, and conversion element, and a metal wiring line connecting to the conversion element and supplying a bias voltage to the conversion element. The metal wiring line is positioned generally parallel to the data line and is closer to the data line that connects to the thin film transistor than approximately the center in the extension direction of the gate line of the conversion element.

Imaging panel and X-ray imaging device provided therewith

A semiconductor device includes, a plurality of oxide semiconductor TFTs including a first gate electrode, a first insulating layer in contact with the first gate electrode, an oxide semiconductor layer opposing the first gate electrode via the first insulating layer, a source electrode and a drain electrode which are connected with the oxide semiconductor layer, and an organic insulating layer covering only some of the plurality of oxide semiconductor TFTs, wherein the plurality of oxide semiconductor TFTs include a first TFT which is covered with the organic insulating layer and a second TFT which is not covered with the organic insulating layer, and the second TFT includes a second gate electrode opposing the oxide semiconductor layer via a second insulating layer, the second gate electrode being arranged to overlap with at least a portion of the first gate electrode with the oxide semiconductor layer interposed therebetween.

Semiconductor device including a plurality of thin-film transistors with one thin-film transistor including two gate electrodes

A TFT substrate () including a plurality of antenna element regions (U) arranged on a dielectric substrate (), the TFT substrate including a transmitting/receiving region including a plurality of antenna element regions, and a non-transmitting/receiving region located outside of the transmitting/receiving region, each of the plurality of antenna element regions (U) including: a thin film transistor (); a first insulating layer () covering the thin film transistor and having a first opening (CH) which exposes a drain electrode (D) of the thin film transistor (); and a patch electrode () formed on the first insulating layer () and in the first opening (CH), and electrically connected to the drain electrode (D) of the thin film transistor, wherein the patch electrode () includes a metal layer, and a thickness of the metal layer is greater than a thickness of a source electrode (S) and the drain electrode (D) of the thin film transistor.

TFT substrate, scanning antenna using same, and method for manufacturing TFT substrate

A scanned antenna () is a scanned antenna including antenna elements (U) arranged together, the scanned antenna comprising: a TFT substrate including a first dielectric substrate (), TFTs, gate bus lines, source bus lines, and patch electrodes (); a slot substrate () including a second dielectric substrate (), and a slot electrode () formed on a first primary surface of the second dielectric substrate; a liquid crystal layer (LC) provided between the TFT substrate and the slot substrate; and a reflective conductive plate () arranged so as to oppose a second primary surface of the second dielectric substrate () with a dielectric layer () interposed therebetween, the second primary surface being on an opposite side from the first primary surface. The TFT substrate (TFT substrate portion (Cb)) includes a terminal region (TR) outside of the seal portion (), and the gate bus lines or the source bus lines are connected to gate terminal portions or source terminal portions formed in the terminal region via a transparent conductive layer () provided between the seal portion () and the TFT substrate.

Scanning antenna comprising a liquid crystal layer and method for manufacturing the same

A light detection device includes: a TFT having a semiconductor layer supported on a substrate, a source electrode, a drain electrode, and a gate electrode; a photodiode having a bottom electrode electrically connected to the drain electrode, a semiconductor laminate structure, and a top electrode; and an electrode made of the same conductive film as the bottom electrode and arranged on the semiconductor layer with an insulating layer interposed therebetween.

Light detection device with integrated photodiode and thin film transistor

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Osaka, Japan

Shigeyasu Mori