Matsushita Electric Industrial Co., Ltd.

Shigetoshi Takayanagi

Kaoru Inoue

Takashi Hirao

Toshio Sugawa

Kazuhiko Tsuji

Takashi Ohzone

Manabu Yoshida

Takeshi Onuma

Jun Fukuchi

A metallization or conductor or semiconductor layer formed over one major surface of a semiconductor wafer subjected to anodizing to form an anodized coating which has excellent adherence to the conductor or semiconductor layer and which is used as an etching mask when the conductor or semiconductor layer is etched.

Method for fabrication of semiconductor devices

A photoelectric conversion device such as a solar cell in which electrodes formed from a conductive paste make ohmic contact with the surfaces of impurity diffused layers respectively formed in a semiconductor substrate. The conductive paste contains ultrafine particles of silver and gold as its principal solid components. The conductive paste further contains, as its additional principal solid components, ultrafine particles of a metal having a eutectic temperature lower than that of silver when alloyed with the semiconductor and a powdery glass material not containing any lead oxide glass component. The electrodes provided by the conductive paste exhibit excellent electrical properties when the conductive paste is subjected to firing treatment at a temperature of about 600.degree. C. Thus, when, for example, the semiconductor substrate is of n-type silicon and a p.sup.+ -type diffused layer is formed in one of its major surfaces to form a p.sup.+ /n junction of relatively small depth, the electrode making ohmic contact with the p.sup.+ -type diffused layer does not penetrate through the p.sup.+ /n junction and has a low contact resistance. The photoelectric conversion device such as the solar cell thus obtained can operate with a higher conversion efficiency than hitherto and can be manufactured at a lower cost than hitherto.

Photoelectric conversion device

A junction-type FET comprising a semiconductor substrate 21 of a first conductivity type, and island region 22 of a second conductivity type which comprises a channel region and is selectively formed in the semiconductor substrate 21, and a buried isolating region 27 which is selected from the group consisting of an intrinsic layer, a low impurity concentration layer of the second conductivity type and a layer of first conductivity type, the buried isolating layer being formed by ion implantation of impurities of the first conductivity type in the island region 22 while keeping the impurity concentration at the surface thereof relatively high, and the buried isolating layer substantially isolating the channel region from the surface.

Junction-type field effect transistor and method of making the same

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Kyoto, Japan

Shigetoshi Takayanagi