Sharp Kabushiki Kaisha Corporation

Sumitomo Electric Industries, Limited

Other

Sanyo Electric Co., Ltd.

National Institute for Materials Science

Shigetoshi Ito

Mototaka Taneya

Yuhzoh Tsuda

Takayuki Yuasa

Takeshi Kamikawa

Yukio Yamasaki

Yoshihiro Ueta

Kensaku Motoki

Toshiyuki Kawakami

Tomoki Ono

Susumu Omi

Teruyoshi Takakura

Zenpei Tani

Koji Takahashi

Kunihiro Takatani

Katsuhiko Kishimoto

Yoshiyuki Takahira

Seiki Yano

Toshiyuki Okumura

Yoshinobu Kawaguchi

Yoshihiko Tani

Daisuke Hanaoka

Makoto Sawamura

Toshio Hata

Naoto Hirosaki

Hidenori Kawanishi

Norikatsu Koide

Taiji Morimoto

Katsuki Furukawa

Hiroshi Fukunaga

Makoto Izumi

Kenichi Yoshimura

Valerie Berryman-Bousquet

Masahiro Araki

Masamichi Harada

Shuichi Hirukawa

Yoshio Honda

Nobuhiko Sawaki

Kazuaki Kaneko

Hirokazu Mouri

Kyoko Matsuda

Masahito Yamaguchi

Shuichiro Yamamoto

Alex Yudin

Fumio Yamashita

Shuhichiroh Yamamoto

Teruyuki Oomatsu

Tomoki Ohno

Norifumi Kameshiro

Kouichi Morishige

A semiconductor light-emitting deviceincludes a heat sink and a semiconductor light-emitting element mounted on the heat sink. A gap is provided between a region of a part of a base bottom surface of a base of the semiconductor light-emitting element and an upper surface of the heat sink, and a lead is disposed in a region where the gap is provided so as to vertically pass through the base. A semiconductor laser chip is provided in a region where the gap is not provided so that its waveguide longitudinal direction is substantially parallel to an upper surface of the base. The lead has its lower end located within the gap and connected to a flexible substrate.

Semiconductor light-emitting device

The present invention provides a light emitting device that makes it possible to provide an image display apparatus having a wide color reproduction range. The light emitting device includes a light emitting element that emits blue light; a Mn-activated &#x3b3;-AlON phosphor that is a green phosphor; and a Mn-activated phosphor that is a red phosphor. The green light emitted by the Mn-activated &#x3b3;-AlON phosphor has an emission-spectrum peak wavelength of not less than 518 nm and not more than 528 nm.

Image display apparatus

A group III nitride based laser light emitting device includes an n-side group III nitride based semiconductor region, a p-side group III nitride based semiconductor region, and a group III nitride based active region between the p-side group III nitride based semiconductor region and n-side group III nitride based semiconductor region. The group III nitride based active region includes first and second quantum well layers and a barrier layer between the first and second quantum well layers, the respective compositions of the first and second quantum well layers comprising different respective amounts of indium. The first quantum well is closer to the n-side group III nitride based semiconductor region than the second quantum well, the second quantum well is closer to the p-side group III nitride based semiconductor region than the first quantum well, and the first quantum well has a larger band gap than the second quantum well.

Semiconductor laser diode with low threshold current

A nitride semiconductor light-emitting device includes a substrate which includes polycrystal silicon dioxide or amorphous silicon dioxide as a main component, an underlying layer that is provided on the substrate, and a multilayer structure that is provided on the underlying layer and includes at least one layer made of a nitride semiconductor single crystal. The underlying layer includes crystals oriented to a c-axis and is formed by sputtering.

Nitride semiconductor light-emitting device and method for producing the same

A semiconductor light-emitting device includes a first conductivity-type semiconductor including a first electrode on a first main surface, a second conductivity-type semiconductor, and an active layer between a second main surface of the first conductivity-type semiconductor and a first main surface of the second conductivity-type semiconductor. Protrusions are disposed in at least part of a region of a second main surface of the second conductivity-type semiconductor facing the first electrode. A second electrode is disposed in at least part of a region of the second main surface of the second conductivity-type semiconductor except the region having the protrusions. The protrusions containing a dielectric material protrude from the second main surface of the second conductivity-type semiconductor in a direction away from the active layer and are separated by intervals longer than the wavelength of light emitted from the active layer in the medium of the protrusions.

A light projecting device of the present invention includes: a light source unit including (i) a laser element for emitting light, (ii) a light converging lens for converging the light emitted from the laser element, and (iii) a light emitting section for emitting light upon receipt of the light converged by the light converging lens; and a reflector for projecting light emitted from the light source unit. The light source unit is provided so as to be attached to or detached from a fixed part to which the light source unit is to be fixed.

Light projecting device and vehicular headlamp

A method of producing a nitride semiconductor crystal uses a metal organic chemical vapor deposition process and offers good controllability with respect to a p-type nitride semiconductor crystal. To that end, an organic metal compound of a group III element, a hydride of nitrogen, and an organic compound having any of the partial structures C&#x2014;C&#x2014;O, C&#x2014;C&#x2550;O, C&#x2550;C&#x2014;O, C&#x2550;C&#x2550;O, C&#x2261;C&#x2014;O, and C&#x2014;O&#x2014;C are used as source materials, and by a metal organic chemical vapor deposition process, C and O atoms are simultaneously introduced into the crystal to obtain p-type conductivity.

Method of producing a nitride semiconductor crystal with precursor containing carbon and oxygen, and nitride semiconductor crystal and semiconductor device made by the method

A light emitting device of the present invention includes: a laser diode group which generates a plurality of laser beams; a cylindrical light emitting element which emits incoherent light in response to the plurality of laser beams; and a light guide irradiation section which (i) guides the plurality of laser beams entered via a light incidence plane toward a light irradiation plane and (ii) irradiates the light irradiation area of the cylindrical light emitting element with the plurality of laser beams thus guided. The light irradiation plane of the light guide irradiation section has an area which is smaller than that of the light incidence plane.

Light emitting device, with light guide member having smaller exit section, and illuminating device, and vehicle headlight including the same

In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.

GaN-based laser device

A light emitting device of the present invention includes: an LD chip for emitting excitation light; a light emitting body for emitting fluorescence upon irradiation with the excitation light from the LD chip; and a mirror including a light reflecting concave surface for reflecting the fluorescence from the light emitting body, the light reflecting concave surface of the mirror having a through-hole at a region other than a bottom region in the vicinity of the bottom of the light reflecting concave surface, and a truncated pyramid light converging section being inserted into the through-hole in order to guide the excitation light from the LD chip to the light emitting body.

Light emitting device, illuminating device, and headlamp

GaN laser element

A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 &#x3bc;m or more.

Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical device

A light emitting apparatus comprises a light emitting section for emitting light, a color of the light being changed with a value of a driving current, and a driving section for driving the light emitting section so that the light emitting section emits light having a desired color and a desired intensity, by generating the driving current based on a signal designating the desired color and a signal designating the desired intensity and by applying the driving current to the light emitting section.

Light emitting apparatus, method for driving the light emitting apparatus, and display apparatus including the light emitting apparatus

Nitride semiconductor laser device including growth-inhibiting film at dislocation concentrated region

Growing community of inventors

Ikoma, Japan

Shigetoshi Ito