Fujitsu Corporation

Shigetaka Uji

Hideo Takagi

Satoshi Otsuka

Nobuhiro Misawa

Masataka Hoshino

Wataru Futo

Koji Endo

Yuzuru Ohta

Yukihiro Satoh

Shyoji Hirao

Kiyoshi Izumi

The method of manufacturing a semiconductor device includes the steps of forming copper wiring; reducing an oxide film on the surface of the copper wiring by heating the copper wiring to a temperature in a range of 250&deg; C.-450&deg; C. under reductive gas or by treating the copper wiring in plasma of reductive gas; and then forming a film of a material not containing oxygen on the copper wiring without exposing the copper wiring to external atmosphere, and can provide a semiconductor device with good copper wiring.

Semiconductor device with copper wiring and its manufacture method

A semiconductor device manufacturing method of the present invention comprises the steps of forming a groove on an insulating film formed over a semiconductor substrate, forming a first copper film on the insulating film and in the groove by sputtering using a target, reflowing the first copper film by heating it, growing a second copper film on the first copper film by plating or chemical vapor deposition, and removing the second copper film and the first copper film on the insulating film by chemical mechanical polishing to remain at least the first copper film in the groove. Accordingly, in the semiconductor device manufacturing method to provide copper wirings, increase in resistance can be suppressed by firmly embedding copper into the groove and also electromigration resistance of copper wirings can be improved.

Semiconductor device manufacturing method

Growing community of inventors

Kawasaki, Japan

Shigetaka Uji