Hitachi, Ltd.

Hitachi Ulsi Engineering Corp.

Mitsubishi Denki Kabushiki Kaisha

Shigeru Tanaka

Ken Takahashi

Tadahiko Miyoshi

Tomoji Oishi

Kazuyuki Miyazawa

Yasuhiro Nakamura

Shingo Shirakawa

Shigehisa Motowaki

Hitoshi Miwa

Tetsuo Nakazawa

Isao Hashimoto

Takeo Yamazaki

Seiichi Yamada

Teteuo Nakazawa

Moritaka Syouji

Toshihiro Tanaka

Kazuyoshi Oshima

Atsushi Ohba

Kunihiro Maeda

Yasutaka Suzuki

Eiji Setoyama

Akio Chiba

Takayuki Yoshitake

Kazuhiro Hirose

Tamihito Kawahigashi

Shinzou Oikawa

Moritaka Shoji

Sigeki Yamamura

Shinichi Oowada

Seiich Yamada

Tadashi Kitami

An aluminum nitride sintered body produced by sintering under pressure of a powder composition comprising aluminum nitride and 5 to 30% by weight of at least one sintering aid selected from the group consisting of Nd, Sm, Eu, Er, Dy, Gd, Pr and Yb, per 100% by weight of the powders of aluminum nitride and the sintering aid, wherein the amount of the sintering aid is a conversion value as oxides of the elements, the sintering body that has been subjected to mirror-polishing having a surface roughness R max of 0.2 &#x3bc;m or less and a thermal conductivity of 200 (W/mK) or more.

Aluminum nitride sintered body and substrate for electronic devices

An ion beam processing apparatus and a method of operating an ion source therefore are provided for reducing the frequency of breakdown due to particles, and for increasing an apparatus available time by operating the apparatus in a stable state for a long time and minimizing maintenance operations such as cleaning for the apparatus, and so on. A plasma generating gas is introduced into a vacuum chamber formed of a processing chamber and an ion source mounted thereto to produce a plasma from the gas, and an electric field is applied within the vacuum chamber to extract ions within the plasma as an ion beam. The ion source comprises an arc power supply, an acceleration power supply for applying an acceleration electrode with a positive potential to extract an ion beam, and a deceleration power supply for applying a deceleration electrode with a negative potential to prevent ions from flowing into the ion source. When the ion source is operated, the acceleration electrode is first applied with the positive potential, and then the deceleration electrode is applied with the negative potential.

Ion beam processing apparatus and method of operating ion source therefor

An ion beam processing apparatus and a method of operating an ion source therefore are provided for reducing the frequency of breakdown due to particles, and for increasing the time that an apparatus can be made available by operating the apparatus in a stable state for a long time and minimizing maintenance operations such as cleaning. A plasma generating gas is introduced into a vacuum chamber formed of a processing chamber and an ion source mounted thereto to produce a plasma from the gas, and an electric field is applied within the vacuum chamber to extract ions within the plasma as an ion beam. The ion source comprises an arc power supply, an acceleration power supply for applying a positive potential to the acceleration electrode in order to extract an ion beam, and a deceleration power supply for applying a negative potential to the deceleration electrode ion order to prevent ions from flowing into the ion source. When the ion source is operated, the acceleration electrode is first applied with the positive potential, and then the deceleration electrode is applied with the negative potential.

A resin-encapsulated semiconductor package and a packaging structure, make it possible to provide for a high density mounting arrangement. Specifically, outer leads protrude from the two long sides of a rectangular package. The inner leads in the package, connected to the outer leads protruding from one long side, are connected through wires to the bonding pads of a semiconductor chip encapsulated in the package, whereas the inner leads in the package, connected to the outer leads protruding from the other long side, are in an electrically floating state in the package. The semiconductor packages are arranged in a direction on a card-shaped mounting board, and the opposed outer leads of adjoining semiconductor packages are electrically connected by wiring on the mounting board. The wirings are laid below the semiconductor packages so that they extend generally linearly.

Semiconductor device

A method of treating a metal alkoxide solution to form metal oxide prepolymer molecules therein is characterized by irradiating the solution with light energy having a wavelength selected to break the metal-alkoxy group bond in said metal alkoxide, thereby to form the metal oxide prepolymer molecules in the solution. The prepolymer is converted into polymeric metal oxide gel. The stoichiometry of the oxide is high. A gel of carbon content below 4 atomic % can be achieved by the step of decarbonizing the gel, preferably using light to produce ozone.

Polymeric metal oxide materials and their formation and use

In a semiconductor storage device wherein data lines connected to a plurality of memory cells selected by a select operation of word lines are sequentially selected by using an address signal generated by an address counter to serially read data in individual unit of at least one word line: redundancy data lines disposed perpendicular to the word lines are provided; a column select circuit receiving a Y address signal selects one of the data lines or redundancy data lines; a redundancy memory circuit stores, in the order of the selection operation by the column select circuit, a defect address signal of a defect data line among the data lines and a redundancy address signal of a corresponding redundancy data line; an address comparator circuit compares one defect address signal read from the redundancy memory circuit with an address signal generated by the address counter; an address signal for the redundancy memory circuit is generated by performing a count operation in response to a coincidence signal generated by the address comparator circuit; and the address signal generated by the address counter is replaced by a redundancy address signal read in response to the coincidence signal from the redundancy memory circuit and used as the Y address signal. Accordingly, a redundancy circuit of simple configuration can be obtained because only a single address comparator circuit is used.

Semiconductor memory device having a defect relief arrangement

A ceramic resistor includes zinc oxide as a main component, and as essential components, aluminum oxide 3.0-40 mol %, magnesium oxide 2.0-40 mol %, silicon oxide 0.1-10 mol %, and at least one kind of compound 0.005-0.5 mol %, selected from a group consisting of calcium oxide, strontium oxide and barium oxide, and has a positive temperature coefficient of resistance. A neutral grounding resistor and a gas circuit breaker, each using the above-mentioned ceramic resistors, are disclosed.

Ceramic resistor, production method thereof, neutral grounding resistor

A mixture of calcinated metallic oxides are mixed with ZnO and SiO.sub.2, granulated, compacted and then sintered to form a nonlinear resistor. After sintering, the formed ZnO resistor elements are heat treated, preferably in a two-step heat treating process.

Method of fabricating non-linear resistor

A non-linear resistor having a high impulse withstanding ability is obtained by directly applying a crystallized glass to the side surface of a sintered body of a ZnO element, and then bake-attaching the crystallized glass to the side surface of the ZnO element by heat treatment. Since the impulse withstanding ability is improved by applying the crystallized glass as the side surface high-resistivity layer of the voltage non-linear resistor, the performance and reliability of an arrester including the resistor is improved.

Voltage non-linear resistor and fabricating method thereof

A vacuum treatment apparatus includes a vacuum chamber having a first treatment position and at least one second treatment position where a substrate supported on a substrate stage subjected to a vacuum treatment. A drive device is operatively connected to a holding device to drive the same so that the holding device can move the substrate stage between the first and second treatment positions. The drive device is also operable to drive the holding device so that the holding device can rotate the substrate stage about the axis thereof at the first treatment position. A rotating device is provided for rotating the substrate stage about the axis thereof when the substrate stage is disposed at the second treatment position.

Vacuum treatment apparatus and vacuum treatment method

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Hitachi, Japan

Shigeru Tanaka