Hitachi, Ltd.

Hitachi Tohbu Semiconductor, Ltd.

Hitachi Ulsi Engineering Corp.

Hitachi Tobu Semiconductor

Shigeru Suzuki

Toshio Sugano

Kiyoshi Inoue

Masashi Horiguchi

Masakazu Aoki

Kazumasa Yanagisawa

Toshio Sasaki

Seiichiro Tsukui

Takao Okubo

Masamichi Kishi

Shigeru Kadowaki

Satoru Nakanishi

Manabu Inoue

Yasuro Kubota

Hironori Iwasaki

Seiichirou Tsukui

A non-volatile memory, such as a flash memory card, using a rewritable non-volatile memory is provided with an improved write-protect arrangement. The non-volatile memory includes a collectively electrically erasable and writable memory (e.g., a flash memory), a reset IC for generating a power-on reset signal upon turn-on of the power supply, and a card controller for performing control between each flash memory device and a memory card interface. The flash memory is set with a write protect save register written with an address of an area desired to be subjected to write protect, the write protect save register belonging to an attribute area, and a protect range is set from the system. Since the address to be write-protected is itself written in the non-volatile flash memory, the address will continue to be stored, even if the power is turned off. A method for software write protection control is also provided.

Non-volatile memory, memory card and information processing apparatus

Input/output terminals of a first semiconductor memory device in which failures or defects exist in units of memory mats and input/output terminals of a second semiconductor memory device having redundant memory mats are connected to one another on a mounted substrate to thereby relieve the failures in the memory mat units. A power source is substantially cut off from supplying to a faulty memory mat.

Semiconductor memory device and memory module using the same

In an SIP module of the type wherein memory ICs are mounted to both surfaces of a substrate, the present invention provides a face package type memory module wherein packaging is made in an inclined direction in place of vertical packaging of the prior art technique and only the memory ICs mounted to the upper surface side of the substrate are deviated to the positions closer to the end portion of the substrate in order to drastically reduce the packaging height.

Semiconductor device

Growing community of inventors

Kokubunji, Japan

Shigeru Suzuki