Micron Technology Incorporated

Elpida Memory, Inc.

Shigeru Sugioka

Keizo Kawakita

Raj K Bansal

Hidenori Yamaguchi

Kiyonori Oyu

Hiroshi Toyama

Noriaki Fujiki

Jung Chul Park

Tsung Che Tsai

Wataru Hoshino

Toshiyuki Maenosono

Takahisa Ishino

Bang Ning Hsu

According to one or more embodiments of the disclosure, an apparatus comprising a metal layer and a redistribution layer on the metal layer is provided. The redistribution layer includes an insulating layer, a via, and a redistribution metal layer. The via is in the insulating layer and has a rectangular shape in a plan view. The redistribution metal layer has a first thickness on a shorter side of the rectangular shape of the via and a second thickness on a longer side of the rectangular shape of the via. The second thickness is greater than the first thickness.

Apparatus, semiconductor device, and redistribution layer structure thereof

According to one or more embodiments, a method of manufacturing a semiconductor device including a plurality of main circuit regions arranged in a matrix and a scribe region provided between the main circuit regions is provided. The method includes: forming a first insulating film; forming a low-k film; forming a plurality of penetrating portions penetrating through the low-k film; and forming a second insulating film under low-coverage film-forming conditions to form cavities in the plurality of through-holes.

Semiconductor device and method of forming the same

A semiconductor device includes a semiconductor substrate having a semiconductor substrate having a main surface including a first portion; a redistribution layer provided over the first portion of the main surface of the semiconductor substrate; an insulating layer covering the first portion of the main surface of the semiconductor substrate and the redistribution layer; and a first polyimide film covering the insulating layer; wherein the polyimide film has a substantially flat upper surface.

Apparatuses and methods for controlling hydrogen supply in manufacturing memory devices are described. An example apparatus includes: a first capacitor disposed above a substrate; a hydrogen supply film above the first capacitor; a second capacitor above the hydrogen supply film; and a barrier film between the hydrogen supply film and the second capacitor. The hydrogen supply film provides hydrogen and/or hydrogen ions. The barrier film is hydrogen-impermeable.

Apparatuses and methods of controlling hydrogen supply in memory device

Apparatuses including structures in scribe lines are described. An example apparatus includes: a first chip and a second chip; a scribe region between the first chip and the second chip; a crack guide region in the scribe region, the crack guide region including a dicing line along which the first chip and the second chip are to be divided; and a structure disposed in the crack guide region and extending along the dicing line.

Apparatuses and methods including patterns in scribe regions of semiconductor devices

A semiconductor device includes a semiconductor substrate; and a multilevel wiring structure on the semiconductor substrate, the multilevel wiring structure including at least an intermediate metal layer over the semiconductor substrate and an uppermost metal layer over the intermediate metal layer, and the multilevel wiring structure being divided into a main circuit portion and a scribe portion surrounding the main circuit portion; wherein the scribe portion of the multilevel wiring layer includes at least a metal pad exposed in the intermediate metal layer.

A semiconductor device includes a semiconductor substrate; a first insulating film and a second insulating film provided above the semiconductor substrate; a low-k film provided between the first insulating film and the second insulating film; an element formation region in which elements included in an electric circuit are formed in the semiconductor substrate; a scribe region provided around the element formation region; a cut portion provided on the outer periphery of the scribe region; and a groove formed between the cut portion and the element formation region, wherein the groove penetrates through the low-k film.

An apparatus comprising first and second interconnections spaced apart from one another, an interlayer insulating material over the first and second interconnections, first and second contacts in the interlayer insulating material and spaced apart from one another, third and fourth interconnections over the interlayer insulating material and spaced apart from one another, and compensation capacitors in a capacitor region. The third interconnections are coupled with the first interconnections through the first contacts and the fourth interconnections are coupled with the second interconnections through the second contacts. The compensation capacitors comprise lower electrodes over the interlayer insulating material, dielectric materials over the lower electrodes, and upper electrodes over the dielectric materials. The lower electrodes comprise edge portions in contact with the second contacts. The third interconnections are elongated over the dielectric materials and are configured to provide elongated portions as the upper electrodes of the compensation capacitors. Related methods, memory devices, and electronic systems are disclosed.

Apparatus comprising compensation capacitors

An apparatus comprising a multilevel wiring structure comprising aluminum interconnections. The aluminum interconnections comprise a first portion, a second portion, and a third portion, where the second portion is between the first portion and the third portion. The third portion comprises a greater width in a lateral direction than a width in the lateral direction of the second portion. A memory device comprising a memory array comprising memory cells and a control logic component electrically connected to the memory array. At least one of the memory cells comprises a multilevel wiring structure comprising interconnect structures, where the interconnect structures comprise a first portion, a second portion adjacent to the first portion, and a third portion adjacent to the second portion. The third portion comprises a greater width in a lateral direction than a width in the lateral direction of the second portion. Related apparatus, memory devices, and methods are also disclosed.

Apparatus comprising aluminum interconnections, memory devices comprising interconnections, and related methods

A method including forming an insulating film over first, second, third and fourth regions of a semiconductor substrate; forming a polyimide film on the insulating film; and patterning the polyimide film with a lithography method using a photomask including at least a first region of a first transmittance rate, a second region of a second transmittance rate, a third region having a shading material, and a fourth region, wherein the first, second, third and fourth regions of the photomask correspond to the first, second, third and fourth regions of the semiconductor substrate, respectively.

Method of forming a semiconductor device, and a photomask used therein

A semiconductor device includes a main circuit region; and a scribe region surrounding the main circuit region; wherein the main circuit region and the scribe region comprises first and second insulating films and a low-k film formed therebetween; and wherein the low-k film of the scribe region includes a plurality of cavities lining along a border between the main circuit region and the scribe region.

In some embodiments, a method of forming an opening in a material comprises forming RIM over target material. Radiation is impinged onto the RIM through a masking tool over a continuous area of the RIM under which a target-material opening will be formed. The masking tool during the impinging allows more radiation there-through onto a mid-portion of the continuous area of the RIM in a vertical cross-section than onto laterally-opposing portions of the continuous area of the RIM that are laterally-outward of the mid-portion of the RIM in the vertical cross-section. After the impinging, the RIM is developed to form a RIM opening that has at least one pair of laterally-opposing ledges laterally-outward of the mid-portion of the RIM in the vertical cross-section elevationally between a top and a bottom of the RIM opening. The developed RIM is used as masking material while etching the target material through the RIM opening to form the target-material opening to have at least one pair of laterally-opposing ledges laterally-outward of a mid-portion in the target-material opening in the vertical cross-section elevationally between a top and a bottom of the target-material opening. Other aspects and constructions independent of manufacture are disclosed.

Integrated circuit structures and methods of forming an opening in a material

Apparatus comprising compensation capacitors and related memory devices and electronic systems

A substrate comprises a pair of immediately-adjacent integrated-circuit dies having scribe-line area there-between. At least one of the dies comprises insulting material above integrated circuitry. The insulating material has an opening therein that extends elevationally inward to an upper conductive node of integrated circuitry within the one die. The one die comprises a conductive line of an RDL above the insulating material. The RDL-conductive line extends elevationally inward into the opening and is directly electrically coupled to the upper conductive node. The insulating material has a minimum elevational thickness from an uppermost surface of the upper conductive node to an uppermost surface of the insulating material that is immediately-adjacent the insulating-material opening. Insulator material is above a conductive test pad in the scribe-line area. The insulator material has an opening therein that extends elevationally inward to an uppermost surface of the conductive test pad. The insulator material has a minimum elevational thickness from the conductive-test-pad uppermost surface to an uppermost surface of the insulator material that is immediately-adjacent the insulator-material opening and that is less than said minimum elevational thickness of the insulating material. Methods are disclosed.

Substrates, structures within a scribe-line area of a substrate, and methods of forming a conductive line of a redistribution layer of a substrate and of forming a structure within a scribe-line area of the substrate

Growing community of inventors

Hiroshima, Japan

Shigeru Sugioka