Canon Kabushiki Kaisha

Other

Shigeru Shirai

Junichiro Kanbe

Keishi Saitoh

Kyosuke Ogawa

Teruo Misumi

Yoichi Osato

Tadaji Fukuda

Minoru Kato

Yasushi Fujioka

Takayoshi Arai

Shigeru Ohno

Keishi Saito

Isamu Shimizu

Eiichi Inoue

Ryuji Okamura

Tetsuya Takei

Yasuyoshi Takai

Toshiyasu Shirasuna

Yutaka Hirai

Kazuyoshi Akiyama

Junichiro Hashizume

Jinsho Matsuyama

Hiroaki Niino

Hirokazu Ohtoshi

Hiroyuki Katagiri

Hirokazu Otoshi

Masaaki Yamamura

Hirokazu Ootoshi

A light receiving member having a light receiving layer comprising a photoconductive layer and a surface layer disposed on a conductive substrate, wherein the photoconductive layer comprises, from the side of the substrate, a first photoconductive layer constituted by an amorphous material containing silicon atoms as a matrix, carbon atoms, hydrogen atoms and fluorine atoms, and a second photoconductive layer constituted by an amorphous material containing silicon atoms as a matrix, and at least one kind of atoms selected from hydrogen atoms and fluorine atoms, wherein the content of said fluorine atoms in the first photoconductive layer is from 1 to 95 atomic ppm based on the content of said silicon atoms.

Light receiving member with an amorphous silicon photoconductive layer

A process for forming a deposited film comprises the steps of:

Process for forming and etching a film to effect specific crystal growth

A photoconductive member, comprises a support for a photoconductive member and an amorphous layer which is constituted of silicon atoms as matrix containing at least one of hydrogen atom and halogen atom and exhibits photoconductivity, said amorphous layer having a layer region containing carbon atoms in at least a part thereof, the content of the carbon atoms in said layer region being distributed unevenly in the direction of the thickness of said layer.

Glow discharge process for making photoconductive member

An electrophotographic light-receiving member comprises a conductive substrate and a light-receiving layer having a photoconductive layer and a surface layer which are successively layered on the conductive substrate, wherein;

Light receiving member

A photoconductive member, comprises a support for a photoconductive member and an amorphous layer which is constituted of silicon atoms as matrix containing at least one of hydrogen atom and halogen atom and exhibits photo-conductivity, said amorphous layer having a layer region containing carbon atoms in at least a part thereof, the content of the carbon atoms in said layer region being distributed unevenly in the direct on of the thickness of said layer.

Photoconductive member

There is provided an improved light receiving member comrpsing a substrate and a light receiving layer formed by laminating a first layer having photoconductivity which is constituted with an amorphous material containing silicon atoms as the main constituent atoms and germanium atoms, and a second layer constituted with an amorphous material containing silicon atoms, carbon atoms and an element for controlling the conductivity. The germanium atoms contained in the first layer are in the state of being unevenly distributed in the entire layer region or in the partial layer region adjacent to the substrate. The first layer may contain one or more kinds selected from an element for controlling the conductivity, oxygen atoms and nitrogen atoms in the entire layer region on in the partial layer region.

Electrophotographic layered light receiving member containing A-Si and Ge

Process for electrophotographic imaging with layered light receiving

A deposited film-forming apparatus comprising a reaction chamber capable of maintaining at a reduced pressure, means for arranging a substrate on which a film is to be formed in said reaction chamber, a gas feed means for supplying a gaseous raw material into said reaction chamber and means for introducing a microwave energy into said reaction chamber, characterized in that said gas feed means is arranged in the space circumscribed by said substrate, said gas feed means comprises a multiple pipe structure, said multiple pipe structure being connected to a gas supply source for supplying said gaseous raw material, the respective constituent pipes of said multiple pipe structure being provided with a plurality of gas spouting holes such that said gas spouting holes are in communication with each other, and means for applying a bias voltage between said substrate and said gas feed means.

Microwave plasma CVD apparatus comprising coaxially aligned multiple gas

An electrophotographic light-receiving member has a surface layer of a non-single crystal material (Si.sub.x C.sub.y O.sub.z).sub.t H.sub.u F.sub.v (wherein 0.1.ltoreq.x.ltoreq.0.4, 0.4.ltoreq.y.ltoreq.0.7, 0.05.ltoreq.z.ltoreq.0.2, x+y+z=1, 0.299.ltoreq.t.ltoreq.0.589, 0.41.ltoreq.u.ltoreq.0.7, 0.001.ltoreq.v.ltoreq.0.1 and t+u+v=1), in which the ratio of silicon atoms bonded to carbon atoms in the surface layer is at least 50% of the total number of silicon atoms, and the ratio of silicon atoms bonded to oxygen atoms is 10 to 30 atomic % of the total number of silicon atoms.

Electrophotographic light-receiving member

An electrophotographic light-receiving member comprises a substrate, a photoconductive layer formed on the substrate and composed of a non-single crystal material containing a base component silicon atoms and a surface layer (surface-side region) made of a non-single crystal material containing silicon, carbon and hydrogen atoms, in which the ratio of silicon atoms having at least one bond to a carbon atom in the surface layer is at least 50% of the total number of silicon atoms. The electrophotographic light-receiving member has good initial electrophotographic properties and particularly good durability under a high-humidity environment.

Electrophotographic light-receiving member having surface region with

Method of forming a photoconductive member with silicon, hydrogen and/or

An improved field effect thin film transistor characterized in that the semiconductor layer being formed from a polycrystal silicon film: said layer containing at least hydrogen atom and fluorine atom except silicon atom layer: and the concentration of said hydrogen atom or said fluorine atom being distributed in the thickness direction in the state that it being relatively thick in a layer region in the side of the substrate and relatively thin in a layer resion in the opposite side. A process for preparing the above field effect thin film transistor, characterized in that the semiconductor layer is formed by:

Field effect thin film transistor having a semiconductor layer formed

There are provided on improved light receiving member for use in electrophotography and a process for the production thereof. The light receiving member comprises a substrate usable for electrophotography and a light receiving layer constituted by a charge injection inhibition layer formed of a polycrystalline material containing silicon atoms as the main constituent atoms and an element for controlling the conductivity, a photoconductive layer formed of an amorphous material containing silicon atoms as the main constituent atoms and at least one kind selected from hydrogen atoms and halogen atoms and a surface layer formed of an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms, said polycrystalline material of which the charge injection inhibition layer being formed being a polycrystalline material prepared by introducing a precursor capable of contributing to formation of the charge injection inhibition layer and an active species reactive with the precursor separately into a film deposition space and chemically reacting them.

Electrophotographic light receiving member having polycrystalline

A process for forming deposited film, which comprises:

Growing community of inventors

Yamato, Japan

Shigeru Shirai